Investigation of traps in AlGaN/GaN HEMTs by current transient spectroscopy

Materials Science and Engineering C

Volumn 26, Issue 2-3, 2006, Pages 383-386

  Gassoumi, M ^a,b   Bluet, J M ^b   Chekir, F ^a   Dermoul, I ^a   Maaref, H ^a   Guillot, G ^b   Minko, A ^c   Hoel, V ^c   Gaquiere C ^c  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c INSTITUT D ELECTRONIQUE   (France)

Author keywords

CDLTS; Deep levels; GaN; HEMTs; Heterostructures; Traps

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON GAS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; HYSTERESIS; SILICON;

DEEP LEVELS; SATURATION CURRENT; TRAPS;

ALUMINUM COMPOUNDS;

EID: 32844458667     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msec.2005.10.033     Document Type: Conference Paper

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