Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

Thin Solid Films

Volumn 515, Issue 10, 2007, Pages 4517-4521

  Arulkumaran, S ^a   Liu, Z H ^b   Ng, G I ^a,b   Cheong, W C ^b   Zeng, R ^b   Bu, J ^b   Wang, H ^b   Radhakrishnan, K ^b   Tan, C L ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

AlGaN GaN; DC; Drain leakage current; HEMTs; Impact ionization; Microwave characteristics; Temperature dependence

Indexed keywords

DC POWER TRANSMISSION; ELECTRON VELOCITY ANALYZERS; GALLIUM NITRIDE; IMPACT IONIZATION; MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EFFECTS; THRESHOLD VOLTAGE;

ALGAN/GAN; DRAIN LEAKAGE CURRENT; MICROWAVE CHARACTERISTICS; TEMPERATURE DEPENDENCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33847032591     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.168     Document Type: Article

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