Drain-current DLTS study of an GaAs/InP MESFET

Microelectronics Journal

Volumn 31, Issue 5, 2000, Pages 359-363

  Dermoul, I ^a   Kalboussi, A ^a   Chekir, F ^a   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CURRENTS; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

DRAIN-CURRENT DEEP LEVEL TRANSIENT SPECTROSCOPY (CDLTS);

MESFET DEVICES;

EID: 0033905586     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(99)00154-8     Document Type: Article

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