Hot electron induced current collapse in AlGaN/GaN HEMTs

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 1035-1038

  Nakajima, Akira ^a   Yagi, Shuichi ^a   Shimizu, Mitsuaki ^a   Adachi, Kazuhiro ^a   Okumura, Hajime ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

AlGaN GaN HEMTs; Current collapse; Device simulation; SiNx; TiO2

Indexed keywords

ALUMINUM GALLIUM NITRIDE; DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; ELECTRONS; GALLIUM NITRIDE; HOT ELECTRONS; III-V SEMICONDUCTORS; SEMICONDUCTOR ALLOYS; SILICON CARBIDE; TITANIUM DIOXIDE;

ALGAN/GAN HEMTS; CURRENT COLLAPSE; DEVICE SIMULATIONS; SINX; TIO2;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 38449116689     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.1035     Document Type: Conference Paper

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