Polarization dependent analysis of AlGaN/GaN HEMT for high power applications

Solid-State Electronics

Volumn 51, Issue 1, 2007, Pages 130-135

  Gangwani, Parvesh ^a   Pandey, Sujata ^b   Haldar, Subhasis ^c   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b AMITY UNIVERSITY   (India)

^c UNIVERSITY OF DELHI   (India)

Author keywords

AlGaN GaN MODFET; Cutoff frequency; Gate drain capacitance; Gate source capacitance; HEMT

Indexed keywords

CAPACITANCE; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; MODULATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

CAPACITANCE VOLTAGE CHARACTERISTICS; CUTOFF FREQUENCY; GATE DRAIN CAPACITANCE; GATE SOURCE CAPACITANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33846571770     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.11.002     Document Type: Article

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