High-performance 2 mm gate width GaN HEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Solid-State Electronics

Volumn 52, Issue 6, 2008, Pages 926-929

  Wang, X L ^a   Chen, T S ^b   Xiao, H L ^a   Wang, C M ^a   Hu, G X ^a   Luo, W J ^a   Tang, J ^a   Guo, L C ^a   Li, J M ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b NANJING ELECTRONIC DEVICES INSTITUTE   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE;

CUT OFF FREQUENCY; GATE WIDTH; POWER ADDED EFFICIENCY (PAE);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 42749092511     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.12.014     Document Type: Article

References (12)

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