-
2
-
-
33845673419
-
Review on copper chemical-mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)-An electrochemical perspective
-
10.1016/j.electacta.2006.07.039
-
Ein-Eli Y, Starosvetsky D. Review on copper chemical-mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)-An electrochemical perspective. Electrochim Acta 52: 1825–1838 (2007)
-
(2007)
Electrochim Acta
, vol.52
, pp. 1825-1838
-
-
Ein-Eli, Y.1
Starosvetsky, D.2
-
3
-
-
4544373838
-
Chemical mechanical planarization for microelectronics applications
-
10.1016/j.mser.2004.06.002
-
Zantye P B, Kumar A, Sikder A K. Chemical mechanical planarization for microelectronics applications. Mater Sci Eng R Rep 45: 89–220 (2004)
-
(2004)
Mater Sci Eng R Rep
, vol.45
, pp. 89-220
-
-
Zantye, P.B.1
Kumar, A.2
Sikder, A.K.3
-
4
-
-
84863002349
-
Tribo-electrochemical characterization of copper with patterned geometry
-
10.1016/j.mee.2012.05.023
-
Joo S, Liang H. Tribo-electrochemical characterization of copper with patterned geometry. Microelectron Eng 98: 12–18 (2012)
-
(2012)
Microelectron Eng
, vol.98
, pp. 12-18
-
-
Joo, S.1
Liang, H.2
-
5
-
-
60349110265
-
Analyzing on nonuniformity of material removal in silicon wafer cmp based on abrasive movement trajectories
-
10.4028/www.scientific.net/AMR.53-54.119
-
Su J, Chen X, Du J, Guo D, Kang R. Analyzing on nonuniformity of material removal in silicon wafer cmp based on abrasive movement trajectories. Adv Mater Res 53–54: 119–124 (2008)
-
(2008)
Adv Mater Res
, vol.53-54
, pp. 119-124
-
-
Su, J.1
Chen, X.2
Du, J.3
Guo, D.4
Kang, R.5
-
6
-
-
0033703498
-
Effects of kinematic variables on nonuniformity in chemical mechanical planarization
-
10.1016/S0890-6955(00)00013-4
-
Hocheng H, Tsai H Y, Tsai M S. Effects of kinematic variables on nonuniformity in chemical mechanical planarization. Int J Mach Tool Manu 40: 1651–1669 (2000)
-
(2000)
Int J Mach Tool Manu
, vol.40
, pp. 1651-1669
-
-
Hocheng, H.1
Tsai, H.Y.2
Tsai, M.S.3
-
7
-
-
63049130938
-
Nonuniformity of wafer and pad in CMP: Kinematic aspects of view
-
10.1109/TSM.2007.907625
-
Feng T. Nonuniformity of wafer and pad in CMP: Kinematic aspects of view. IEEE Trans Semicond Manuf 20: 451–463 (2007)
-
(2007)
IEEE Trans Semicond Manuf
, vol.20
, pp. 451-463
-
-
Feng, T.1
-
8
-
-
0742268461
-
Effect of process conditions on uniformity of velocity and wear distance of pad and wafer during chemical mechanical planarization
-
2126367, 10.1007/s11664-004-0294-4
-
Kim H, Jeong H. Effect of process conditions on uniformity of velocity and wear distance of pad and wafer during chemical mechanical planarization. J Electron Mater 33: 53–60 (2004)
-
(2004)
J Electron Mater
, vol.33
, pp. 53-60
-
-
Kim, H.1
Jeong, H.2
-
9
-
-
40249113048
-
Influence of slurry components on uniformity in copper chemical mechanical planarization
-
10.1016/j.mee.2007.12.044
-
Lee H, Park B, Jeong H. Influence of slurry components on uniformity in copper chemical mechanical planarization. Microelectron Eng 85: 689–696 (2008)
-
(2008)
Microelectron Eng
, vol.85
, pp. 689-696
-
-
Lee, H.1
Park, B.2
Jeong, H.3
-
10
-
-
0035737991
-
Optimization of tribological properties of silicon dioxide during the chemical mechanical planarization process
-
10.1007/s11664-001-0168-y
-
Sikder A K, Giglio F, Wood J, Kumar A, Anthony M. Optimization of tribological properties of silicon dioxide during the chemical mechanical planarization process. J Electron Mater 30: 1520–1526 (2001)
-
(2001)
J Electron Mater
, vol.30
, pp. 1520-1526
-
-
Sikder, A.K.1
Giglio, F.2
Wood, J.3
Kumar, A.4
Anthony, M.5
-
11
-
-
84887415174
-
Boron-based nanoparticles for chemical-mechanical polishing of copper films
-
10.1149/2.021301jss
-
He X, Joo S, Xiao H, Liang H. Boron-based nanoparticles for chemical-mechanical polishing of copper films. ECS J Solid State Sci Technol 2: P20–P25 (2013)
-
(2013)
ECS J Solid State Sci Technol
, vol.2
, pp. P20-P25
-
-
He, X.1
Joo, S.2
Xiao, H.3
Liang, H.4
-
12
-
-
44449140080
-
Physics and tribology of chemical mechanical planarization
-
Kasai T, Bhushan B. Physics and tribology of chemical mechanical planarization. J Phys: Condens Matter 20: 225011 (2008)
-
(2008)
J Phys: Condens Matter
, vol.20
, pp. 225011
-
-
Kasai, T.1
Bhushan, B.2
-
13
-
-
0034229037
-
Multizone uniformity control of a chemical mechanical polishing process utilizing a pre- and postmeasurement strategy
-
10.1116/1.582342
-
Chemali C E, Moyne J, Khan K, Nadeau R, Smith P, Colt J, Chapple-Sokol J. Multizone uniformity control of a chemical mechanical polishing process utilizing a pre- and postmeasurement strategy. J Vac Sci Technol A 18: 1287–1296 (2000)
-
(2000)
J Vac Sci Technol A
, vol.18
, pp. 1287-1296
-
-
Chemali, C.E.1
Moyne, J.2
Khan, K.3
Nadeau, R.4
Smith, P.5
Colt, J.6
Chapple-Sokol, J.7
-
14
-
-
0035944493
-
A study of carrier motion on a dual-face CMP machine
-
10.1016/S0924-0136(01)01045-7
-
Tso P, Wang Y, Tsai M. A study of carrier motion on a dual-face CMP machine. J Mater Process Technol 116: 194–200 (2001)
-
(2001)
J Mater Process Technol
, vol.116
, pp. 194-200
-
-
Tso, P.1
Wang, Y.2
Tsai, M.3
-
16
-
-
0001450380
-
The dispersion of matter in turbulent flow through a pipe
-
10.1098/rspa.1954.0130
-
Taylor G. The dispersion of matter in turbulent flow through a pipe. Proc R Soc Lond A 223: 446–468 (1954)
-
(1954)
Proc R Soc Lond A
, vol.223
, pp. 446-468
-
-
Taylor, G.1
-
17
-
-
0345466093
-
Mass transfer in laminar flow
-
61966, 10.1098/rspa.1954.0006, 0058.40801
-
Spalding D B. Mass transfer in laminar flow. Proc R Soc Lond A 221: 78–99 (1954)
-
(1954)
Proc R Soc Lond A
, vol.221
, pp. 78-99
-
-
Spalding, D.B.1
-
18
-
-
0035338991
-
Material removal mechanism in chemical mechanical polishing: Theory and modeling
-
10.1109/66.920723
-
Luo J, Dornfeld D A. Material removal mechanism in chemical mechanical polishing: Theory and modeling. IEEE Trans Semicond Manuf 14: 112–133 (2001)
-
(2001)
IEEE Trans Semicond Manuf
, vol.14
, pp. 112-133
-
-
Luo, J.1
Dornfeld, D.A.2
-
19
-
-
70350724324
-
A material removal model for cmp based on the contact mechanics of pad, abrasives, and wafer
-
10.1149/1.3231691
-
Bozkaya D, Müftü S. A material removal model for cmp based on the contact mechanics of pad, abrasives, and wafer. J Electrochem Soc 156: H890–H902 (2009)
-
(2009)
J Electrochem Soc
, vol.156
, pp. H890-H902
-
-
Bozkaya, D.1
Müftü, S.2
-
20
-
-
0028444787
-
Tribology analysis of chemical-mechanical polishing
-
10.1149/1.2054985
-
Runnels S R, Eyman L M. Tribology analysis of chemical-mechanical polishing. J Electrochem Soc 141: 1698–1701 (1994)
-
(1994)
J Electrochem Soc
, vol.141
, pp. 1698-1701
-
-
Runnels, S.R.1
Eyman, L.M.2
-
21
-
-
0036474675
-
Hydrodynamic characteristics of the thin fluid film in chemical-mechanical polishing
-
10.1109/66.983442, 01902463
-
Chen J M, Fang Y-C. Hydrodynamic characteristics of the thin fluid film in chemical-mechanical polishing. IEEE Trans Semicond Manuf 15: 39–44 (2002)
-
(2002)
IEEE Trans Semicond Manuf
, vol.15
, pp. 39-44
-
-
Chen, J.M.1
Fang, Y.-C.2
-
22
-
-
11444254916
-
Chemical boundary lubrication in chemical-mechanical planarization
-
10.1016/j.triboint.2004.08.006
-
Liang H. Chemical boundary lubrication in chemical-mechanical planarization. Trobol Int 38: 235–242 (2005)
-
(2005)
Trobol Int
, vol.38
, pp. 235-242
-
-
Liang, H.1
-
23
-
-
0031920304
-
Effect of slurry viscosity modification on oxide and tungsten CMP
-
10.1016/S0043-1648(97)00219-6
-
Grover G S, Liang H, Ganeshkumar S, Fortino W. Effect of slurry viscosity modification on oxide and tungsten CMP. Wear 214: 10–13 (1998)
-
(1998)
Wear
, vol.214
, pp. 10-13
-
-
Grover, G.S.1
Liang, H.2
Ganeshkumar, S.3
Fortino, W.4
-
24
-
-
84887355936
-
Copper CMP: The relationship between polish rate uniformity and lubrication
-
10.1149/2.004204jss
-
Nolan L, Cadien K. Copper CMP: The relationship between polish rate uniformity and lubrication. ECS J Solid State Sci Technol 1: P157–P163 (2012)
-
(2012)
ECS J Solid State Sci Technol
, vol.1
, pp. P157-P163
-
-
Nolan, L.1
Cadien, K.2
-
25
-
-
0036027394
-
A study of the effects of polishing parameters on material removal rate and non-uniformity
-
10.1016/S0890-6955(01)00089-X
-
Lin S, Wu M. A study of the effects of polishing parameters on material removal rate and non-uniformity. Int J Mach Tool Manu 42: 99–103 (2002)
-
(2002)
Int J Mach Tool Manu
, vol.42
, pp. 99-103
-
-
Lin, S.1
Wu, M.2
-
26
-
-
0041885507
-
An analytical dishing and step height reduction model for chemical mechanical planarization (CMP)
-
10.1109/TSM.2003.815202
-
Fu G, Chandra A. An analytical dishing and step height reduction model for chemical mechanical planarization (CMP). IEEE Trans Semicond Manuf 16: 477–485 (2003)
-
(2003)
IEEE Trans Semicond Manuf
, vol.16
, pp. 477-485
-
-
Fu, G.1
Chandra, A.2
-
27
-
-
0242509156
-
A physical model for dishing during metal CMP
-
10.1149/1.1611497
-
Nguyen V H, Daamen R, van Kranenburg H, van der Velden P, Woerlee P H. A physical model for dishing during metal CMP. J Electrochem Soc 150: G689–G693 (2003)
-
(2003)
J Electrochem Soc
, vol.150
, pp. G689-G693
-
-
Nguyen, V.H.1
Daamen, R.2
van Kranenburg, H.3
van der Velden, P.4
Woerlee, P.H.5
-
28
-
-
0035558036
-
A contact-mechancis based model for dishing and erosion in chemical-mechanical polishing
-
Vlassak J J. A contact-mechancis based model for dishing and erosion in chemical-mechanical polishing. Mater Res Soc Symp 671: M4.6.1–M4.6.6 (2001)
-
(2001)
Mater Res Soc Symp
, vol.671
-
-
Vlassak, J.J.1
-
29
-
-
0034960709
-
Mechanisms of the chemical mechanical polishing (CMP) process in integrated circuit fabrication
-
10.1016/S0007-8506(07)62112-X
-
Saka N, Lai J Y, Chun J H, Shu N P. Mechanisms of the chemical mechanical polishing (CMP) process in integrated circuit fabrication. CIRP Ann Manuf Technol 50: 233–238 (2001)
-
(2001)
CIRP Ann Manuf Technol
, vol.50
, pp. 233-238
-
-
Saka, N.1
Lai, J.Y.2
Chun, J.H.3
Shu, N.P.4
-
30
-
-
0034296462
-
Abrasive-free polishing for copper damascene interconnection
-
10.1149/1.1393994
-
Kondo S, Sakuma N, Homma Y, Goto Y, Ohashi N, Yamaguchi H, Owada N. Abrasive-free polishing for copper damascene interconnection. J Electrochem Soc 147: 3907–3913 (2000)
-
(2000)
J Electrochem Soc
, vol.147
, pp. 3907-3913
-
-
Kondo, S.1
Sakuma, N.2
Homma, Y.3
Goto, Y.4
Ohashi, N.5
Yamaguchi, H.6
Owada, N.7
-
31
-
-
0037363286
-
Application of soft landing to the process control of chemical mechanical polishing
-
10.1016/S0167-9317(02)01024-9
-
Chiu J, Yu C, Shen S. Application of soft landing to the process control of chemical mechanical polishing. Microelectron Eng 65: 345–356 (2003)
-
(2003)
Microelectron Eng
, vol.65
, pp. 345-356
-
-
Chiu, J.1
Yu, C.2
Shen, S.3
-
32
-
-
1642577079
-
Tribology and removal rate characteristics of abrasive-free slurries for copper CMP applications
-
10.1143/JJAP.42.6809
-
Denardis D, Sorooshian J, Habiro M, Rogers C, Philipossian A. Tribology and removal rate characteristics of abrasive-free slurries for copper CMP applications. Jpn J Appl Phys 42: 6809–6814 (2003)
-
(2003)
Jpn J Appl Phys
, vol.42
, pp. 6809-6814
-
-
Denardis, D.1
Sorooshian, J.2
Habiro, M.3
Rogers, C.4
Philipossian, A.5
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