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Volumn 65, Issue 3, 2003, Pages 345-356

Application of soft landing to the process control of chemical mechanical polishing

Author keywords

Chemical mechanical polishing; Damascene; Minimum time problem; Soft landing; STI process control

Indexed keywords

CHEMICAL MECHANICAL POLISHING; OPTIMAL CONTROL SYSTEMS; PROCESS CONTROL; SPACECRAFT; THROUGHPUT;

EID: 0037363286     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)01024-9     Document Type: Article
Times cited : (17)

References (13)
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    • Operational aspects of chemical mechanical polishing: Polish pad profile optimization
    • Chen C.Y., Yu C.C., Shen S.H., Ho M. Operational aspects of chemical mechanical polishing: polish pad profile optimization. J. Electrochem. Soc. 147:2000;3922.
    • (2000) J. Electrochem. Soc. , vol.147 , pp. 3922
    • Chen, C.Y.1    Yu, C.C.2    Shen, S.H.3    Ho, M.4
  • 4
    • 0033076595 scopus 로고    scopus 로고
    • Pattern planarization model of chemical mechanical polishing
    • Chen D.Z., Lee B.S. Pattern planarization model of chemical mechanical polishing. J. Electrochem. Soc. 146:1999;744-748.
    • (1999) J. Electrochem. Soc. , vol.146 , pp. 744-748
    • Chen, D.Z.1    Lee, B.S.2
  • 7
    • 0036891885 scopus 로고    scopus 로고
    • Robust operation of copper chemical mechanical polishing
    • Kao Y.C., Yu C.C., Shen S.H. Robust operation of copper chemical mechanical polishing. Microelectron. Eng. 65:2002;61-75.
    • (2002) Microelectron. Eng. , vol.65 , pp. 61-75
    • Kao, Y.C.1    Yu, C.C.2    Shen, S.H.3
  • 10
    • 0028444787 scopus 로고
    • Tribology analysis of chemical mechanical polishing
    • Runnels S.R., Eyman L.M. Tribology analysis of chemical mechanical polishing. J. Electrochem. Soc. 141:1994;1689-1701.
    • (1994) J. Electrochem. Soc. , vol.141 , pp. 1689-1701
    • Runnels, S.R.1    Eyman, L.M.2
  • 12
    • 0031075324 scopus 로고    scopus 로고
    • Re-examination of pressure and speed dependence of removal rate during chemical-mechanical polishing process
    • Tseng W.T., Wang Y.L. Re-examination of pressure and speed dependence of removal rate during chemical-mechanical polishing process. J. Electrochem. Soc. 144:1997;L15.
    • (1997) J. Electrochem. Soc. , vol.144 , pp. 15
    • Tseng, W.T.1    Wang, Y.L.2
  • 13


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.