Influence of slurry components on uniformity in copper chemical mechanical planarization

Microelectronic Engineering

Volumn 85, Issue 4, 2008, Pages 689-696

  Lee, Hyunseop ^a   Park, Boumyoung ^a   Jeong, Haedo ^a  

^a Pusan National University   (South Korea)

Author keywords

Benzotriazole (BTA); Citric acid; Colloidal silica; Copper CMP; Copper slurry; Hydrogen peroxide; Material removal rate (MRR) profile

Indexed keywords

CITRIC ACID; COPPER; HYDROGEN PEROXIDE;

BENZOTRIAZOLE (BTA); COLLOIDAL SILICA; MATERIAL REMOVAL RATE (MRR) PROFILE; WAFER EDGES;

SLURRIES;

EID: 40249113048     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.12.044     Document Type: Article

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