A physical model for dishing during metal CMP

Journal of the Electrochemical Society

Volumn 150, Issue 11, 2003, Pages

  Nguyen, Viet H ^a,d   Daamen, Roel ^a   Van Kranenburg, Herma ^b   Van Der Velden, Peter ^c   Woerlee, Pierre H ^a,d  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b TELEMATICA INSTITUUT   (Netherlands)

^c Rodel Europe GmbH   (Germany)

^d UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COPPER; ELASTIC MODULI; HYDROGEN PEROXIDE; MATHEMATICAL MODELS; MODELS; MORPHOLOGY; PRESSURE; PROFILOMETRY; SLURRIES; SUBSTRATES; SURFACES;

CONTACT AREA; CONTACT SIZE DISTRIBUTION; COPPER WAFERS; DAMASCENE METAL INTERCONNECT; DISHING; END POINT DETECTOR; POLISHING PAD;

CHEMICAL MECHANICAL POLISHING;

EID: 0242509156     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1611497     Document Type: Article

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