Comparison of a state of the art Si IGBT and next generation fast switching devices in a 4 kW boost converter

2015 IEEE Energy Conversion Congress and Exposition, ECCE 2015

Volumn , Issue , 2015, Pages 3003-3011

  Anthon, Alexander ^a   Zhang, Zhe ^a   Andersen, Michael A E ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

Boost converter; Efficiency; Si IGBT; SiC JFET; SiC MOSFET

Indexed keywords

EFFICIENCY; ENERGY CONVERSION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MOSFET DEVICES; SILICON; SILICON CARBIDE; SWITCHING; WIDE BAND GAP SEMICONDUCTORS;

BOOST CONVERTER; COMPREHENSIVE COMPARISONS; ELECTRICAL POWER MEASUREMENTS; HIGH FREQUENCY OPERATION; SIC JFET; SIC MOSFET; SILICON CARBIDES (SIC); SWITCHING TRANSITIONS;

DC-DC CONVERTERS;

EID: 84963575866     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2015.7310080     Document Type: Conference Paper

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