Design and performance of a 200-kHz All-SiC JFET current DC-link back-to-back converter

IEEE Transactions on Industry Applications

Volumn 45, Issue 5, 2009, Pages 1868-1878

  Friedli, Thomas ^a   Round, Simon D ^a,b   Hassler, Dominik ^a   Kolar, Johann W ^a  

^a ETH ZURICH   (Switzerland)

^b ABB SWITZERLAND LTD   (Switzerland)

Author keywords

All silicon carbide; Current source converter (CSC); JFET; Normally on

Indexed keywords

ALL-SILICON CARBIDE; BACK-TO-BACK CONVERTER; CONVERTER SYSTEM; CURRENT SOURCES; CURRENT-SOURCE CONVERTER (CSC); DC-LINK; HIGH POWER APPLICATIONS; HIGH-VOLTAGES; JFET; LOW POWER; LOW SWITCHING FREQUENCY; NORMALLY ON; ON-STATE RESISTANCE; POWER DENSITIES; SI MOSFET; SILICON DEVICES; SWITCHING BEHAVIORS; SWITCHING DEVICES; SWITCHING LOSS; VOLTAGE SOURCE CONVERTERS;

CRYOGENIC LIQUIDS; ELECTRIC CONVERTERS; ELECTRIC POWER SUPPLIES TO APPARATUS; POWER ELECTRONICS; SILICON CARBIDE; SWITCHING FREQUENCY; TOPOLOGY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70349969787     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2009.2027538     Document Type: Article

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