Power Loss, System Efficiency, and Leakage Current Comparison Between Si IGBT VFD and SiC FET VFD With Various Filtering Options

IEEE Transactions on Industry Applications

Volumn 51, Issue 5, 2015, Pages 3858-3866

  Swamy, Mahesh M ^a   Kang, Jun Koo ^a   Shirabe, Kohei ^b  

^a Yaskawa Electric America Inc   (United States)

^b YASKAWA ELECTRIC CORPORATION   (Japan)

Author keywords

dv dt filter for SiC VFD; Efficiency comparison between SiC and Si IGBT VFDs; Filtering options for high speed power switches; High speed power semiconductor devices; Sine filter for SiC VFD

Indexed keywords

EFFICIENCY; ELECTRIC DRIVES; ELECTRIC MOTORS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SILICON; WAVE FILTERS;

CARRIER FREQUENCY; DV/DT FILTER FOR SIC VFD; EFFICIENCY COMPARISONS; HIGH SPEED; MOTOR DRIVE SYSTEM; SINE FILTER FOR SIC VFD; SYSTEM EFFICIENCY; VARIABLE FREQUENCY DRIVES;

SILICON CARBIDE;

EID: 84953418651     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2015.2420616     Document Type: Article

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