Gate oxide degradation of SiC MOSFET in switching conditions

IEEE Electron Device Letters

Volumn 35, Issue 12, 2014, Pages 1284-1286

  Ouaida, Rémy ^a,b   Berthou, Maxime ^a   León, Javier ^c   Perpiñà, Xavier ^c   Oge, Sebastien ^b   Brosselard, Pierre ^a   Joubert, Charles ^a  

^a UNIVERSITÉ DE LYON   (France)

^b Thales Microelectronics ^*  (France)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

aging test; failure mechanism; oxide degradation; power MOSFET; reliability; Silicon carbide; switching

Indexed keywords

DEGRADATION; FAILURE (MECHANICAL); GATE DIELECTRICS; ION BEAMS; LEAKAGE CURRENTS; MOSFET DEVICES; RELIABILITY; SCANNING ELECTRON MICROSCOPY; SWITCHING; TESTING;

AGING TESTS; ELECTRICAL PARAMETER; FAILURE MECHANISM; GATE OXIDE DEGRADATION; GATE-LEAKAGE CURRENT; OXIDE DEGRADATION; POWER MOSFET; SWITCHING CONDITIONS;

SILICON CARBIDE;

EID: 84913595576     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2014.2361674     Document Type: Article

References (9)

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