EMI generation characteristics of SiC and Si Diodes: Influence of reverse-recovery characteristics

IEEE Transactions on Power Electronics

Volumn 30, Issue 3, 2015, Pages 1131-1136

  Yuan, Xibo ^a   Walder, Sam ^a   Oswald, Niall ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

Electromagnetic interference (EMI); reverse recovery; Schottky diode; slicon carbide

Indexed keywords

REVERSE RECOVERY; REVERSE-RECOVERY CHARACTERISTICS; SCHOTTKY DIODES;

SIGNAL INTERFERENCE;

EID: 84908281079     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2014.2340404     Document Type: Article

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