Switching investigations on a SiC MOSFET in a TO-247 package

IECON Proceedings (Industrial Electronics Conference)

Volumn , Issue , 2014, Pages 1854-1860

  Anthon, Alexander ^a   Hernandez, Juan C ^a   Zhang, Zhe ^a   Andersen, Michael A E ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

IGBT; Multilevel inverter; SiC MOSFET; Switching energy

Indexed keywords

INDUCTANCE; INDUSTRIAL ELECTRONICS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MOSFET DEVICES; SILICON CARBIDE;

COMMON SOURCE INDUCTANCES; EFFICIENCY IMPROVEMENT; LOWER SWITCHING LOSS; MULTILEVEL INVERTER; PARASITIC INDUCTANCES; PRACTICAL INVESTIGATIONS; SIC MOSFET; SWITCHING ENERGY;

SWITCHING;

EID: 84949927302     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IECON.2014.7048754     Document Type: Conference Paper

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