Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules

IEEE Transactions on Industry Applications

Volumn 51, Issue 1, 2015, Pages 420-428

  Akagi, Hirofumi ^a   Yamagishi, Tatsuya ^a   Tan, Nadia Mei Lin ^b   Miyazaki, Yuji ^c   Kinouchi, Shin Ichi ^c   Koyama, Masato ^d  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b Universiti Tenaga Nasional   (Malaysia)

^c MITSUBISHI ELECTRIC CORPORATION   (Japan)

^d KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Bidirectional isolated dc dc converters; conversion efficiency; dual active bridge configuration; SiC MOSFET

Indexed keywords

CONVERSION EFFICIENCY; HVDC POWER TRANSMISSION; MOSFET DEVICES; SILICON CARBIDE;

BIDIRECTIONAL ISOLATED DC-DC CONVERTER; CONDUCTION LOSS; CONTROL CIRCUITS; DUAL ACTIVE BRIDGES; GATE DRIVES; POWER-LOSSES; SIC MOSFET; SWITCHING LOSS;

DC-DC CONVERTERS;

EID: 84921516343     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2014.2331426     Document Type: Article

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