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Volumn 12, Issue 17, 2016, Pages 2313-2320

Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy

(11) Khan, Jafar I a Adhikari, Aniruddha a Sun, Jingya a Priante, Davide a Bose, Riya a Shaheen, Basamat S a Ng, Tien Khee a Zhao, Chao a Bakr, Osman M a Ooi, Boon S a Mohammed, Omar F a

a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (Saudi Arabia)

Author keywords

4D ultrafast microscopy; carrier recombination; charge carrier dynamics; InGaN nanowires; passivation

Indexed keywords

CHARGE CARRIERS; CHARGE TRAPPING; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; INTERFACE STATES; LIGHT EMISSION; NANOWIRES; OPTOELECTRONIC DEVICES; PASSIVATION; SCANNING ELECTRON MICROSCOPY;

CARRIER RECOMBINATION; CHARGE CARRIER DYNAMICS; COMMERCIAL EXPLOITATION; INGAN NANOWIRES; LIGHT EMITTING DEVICES; SECONDARY ELECTRON IMAGES; ULTRA-FAST; ULTRAFAST ELECTRON MICROSCOPY;

DYNAMICS;

EID: 84960157574 PISSN: 16136810 EISSN: 16136829 Source Type: Journal
DOI: 10.1002/smll.201503651 Document Type: Article

Times cited : (41)

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