Excitation dependent two-component spontaneous emission and ultrafast amplified spontaneous emission in dislocation-free InGaN nanowires

Applied Physics Letters

Volumn 102, Issue 9, 2013, Pages

  You, Guanjun ^a   Guo, Wei ^b   Zhang, Chunfeng ^a   Bhattacharya, Pallab ^b   Henderson, Ron ^c   Xu, Jian ^a  

^a The Pennsylvania State University   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c MIDDLE TENNESSEE STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIED SPONTANEOUS EMISSIONS; EXCITATION DENSITY; FEMTOSECOND EXCITATION; LOCALIZED EXCITON; PHOTOLUMINESCENCE SPECTRUM; RADIATIVE RECOMBINATION; RECOMBINATION RATE; TIME-RESOLVED PHOTOLUMINESCENCE;

EXCITONS; MOLECULAR BEAM EPITAXY; NANOWIRES; PHOTOLUMINESCENCE;

SPONTANEOUS EMISSION;

EID: 84875126244     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4794418     Document Type: Article

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