Optical control of internal electric fields in band gap-graded InGaN nanowires

Nano Letters

Volumn 15, Issue 1, 2015, Pages 332-338

  Erhard, N ^a,b   Sarwar, A T M Golam ^c   Yang, F ^c   McComb, D W ^c   Myers, R C ^c   Holleitner, A W ^a,b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b NANOSYSTEMS INITIATIVE MUNICH NIM   (Germany)

^c The Ohio State University   (United States)

Author keywords

band structure; InGaN nanowire; photodetector; ultrafast photocurrent

Indexed keywords

BAND STRUCTURE; ELECTRIC FIELDS; ENERGY GAP; GRADING; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; PHOTODETECTORS; PHOTONS;

BUILDING BLOCKES; INGAN NANOWIRES; INTERNAL ELECTRIC FIELDS; LINEAR GRADING; OPTICAL CONTROL; PHOTOCURRENT RESPONSE; STRUCTURE SIMULATIONS; ULTRA-FAST;

NANOWIRES;

EID: 84920972992     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl503616w     Document Type: Article

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