On the phenomenon of large photoluminescence red shift in GaN nanoparticles

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-6

  Slimane, Ahmed Ben ^a   Najar, Adel ^a   Elafandy, Rami ^a   San Román Alerigi, Damián P ^a   Anjum, Dalaver ^a   Ng, Tien Khee ^a   Ooi, Boon S ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

Gallium nitride nanoparticles; Large tunable emission; Photoluminescence red shift; Potential fluctuation; Surface state effect; Ultraviolet electroless etching

Indexed keywords

DOPPLER EFFECT; ETCHING; GALLIUM NITRIDE; III-V SEMICONDUCTORS; METAL NANOPARTICLES; NITRIDES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SURFACE STATES;

ELECTROLESS ETCHINGS; GALLIUM NITRIDE NANOPARTICLES; POTENTIAL FLUCTUATIONS; SURFACE STATE EFFECT; TUNABLE EMISSIONS;

RED SHIFT;

EID: 84887278506     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-342     Document Type: Article

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