Nonradiative recombination mechanism in phosphor-free gan-based nanowire white light emitting diodes and the effect of ammonium sulfide surface Passivation

ECS Transactions

Volumn 53, Issue 2, 2013, Pages 93-100

  Nguyen, H P T ^a   Djavid, M ^a   Mi, Z ^a  

^a MCGILL UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

INGAN/GAN QUANTUM WELL; INJECTION CURRENTS; NON-RADIATIVE RECOMBINATIONS; NONRADIATIVE RECOMBINATION PROCESS; SHOCKLEY-READ-HALL; SIMULATION STUDIES; SURFACE PASSIVATION; WHITE LIGHT EMITTING DIODES;

ENERGY GAP; MOLECULAR BEAM EPITAXY; NANOWIRES; QUANTUM EFFICIENCY; SEMICONDUCTOR MATERIALS;

LIGHT EMITTING DIODES;

EID: 84885617706     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/05302.0093ecst     Document Type: Conference Paper

References (29)

1. H. P. T. Nguyen, K. Cui, S. Zhang, S. Fathololoumi, and Z. Mi, Nanotechnology, 22, 445202 (2011).
2. H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, M. Couillard, G. A. Botton, and Z. Mi, Nano Lett., 11, 1919 (2011).
3. H. P. T. Nguyen, S. Zhang, K. Cui, A. Korinek, G. A. Botton, and M. Zetian, IEEE Photonics Technol. Lett., 24, 321 (2012).
4. W. Guo, A. Banerjee, P. Bhattacharya, and B. S. Ooi, Appl. Phys. Lett., 98, 193102 (2011).
5. W. Guo, M. Zhang, A. Banerjee, and P. Bhattacharya, Nano Lett., 10, 3355 (2010).
6. J. Q. Xie, X. F. Ni, Q. Fan, R. Shimada, U. Ozgur, and H. Morkoc, Appl. Phys. Lett., 93, 121107 (2008).
7. I. Rozhansky and D. Zakheim, Semiconductors, 40, 839 (2006).
8. I. A. Pope, P. M. Smowton, P. Blood, J. D. Thomson, M. J. Kappers, and C. J. Humphreys, Appl. Phys. Lett., 82, 2755 (2003).
9. H. P. T. Nguyen, K. Cui, S. Zhang, M. Djavid, A. Korinek, G. A. Botton, and Z. Mi, Nano Lett., 12, 1317 (2012).
10. C. G. Van de Walle and D. Segev, J. Appl. Phys., 101, 6 (2007).
11. M. Bertelli, P. Loptien, M. Wenderoth, A. Rizzi, R. G. Ulbrich, M. C. Righi, A. Ferretti, L. Martin-Samos, and C. M. Bertoni, Phys. Rev. B, 80, 115324 (2009).
12. H. P. T. Nguyen, M. Djavid, K. Cui, and Z. Mi, Nanotechnology, 23, 194012 (2012).
13. W. D. Chen, X. Q. Li, L. H. Duan, X. L. Xie, and Y. D. Cui, Appl. Surf. Sci., 100-101, 592 (1996).
14. S. A. Chevtchenko, M. A. Reshchikov, Q. Fan, X. Ni, Y. T. Moon, A. A. Baski, and H. Morkoc, J. Appl. Phys., 101, 113709 (2007).
15. N. Tajik, C. M. Haapamaki, and R. R. LaPierre, Nanotechnology, 23, 315703 (2012).
16. T. Hashizume, S. Ootomo, S. Oyama, M. Konishi, and H. Hasegawa, J. Vac. Sci. Technol. B, 19, 1675 (2001).
17. M. H. Sun, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, and C. Z. Ning, Nano Lett., 12, 3378 (2012).
18. V. N. Bessolov and M. V. Lebedev, Semiconductors, 32, 1141 (1998).
19. M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Appl. Phys. Lett., 91, 183507 (2007).
20. M. Zhang, P. Bhattacharya, J. Singh, and J. Hinckley, Appl. Phys. Lett., 95, 201108 (2009).
21. W. Guo, M. Zhang, P. Bhattacharya, and J. Heo, Nano Lett., 11, 1434 (2011).
22. M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni, U. Zehnder, and B. Hahn, J. Appl. Phys., 106, 114508 (2009).
23. Z. Liu, T. Wei, E. Guo, X. Yi, L. Wang, J. Wang, G. Wang, Y. Shi, I. Ferguson, and J. Li, Appl. Phys. Lett., 99, 091104 (2011).
24. D. S. Meyaard, Q. Shan, Q. Dai, J. Cho, E. F. Schubert, M.-H. Kim, and C. Sone, Appl. Phys. Lett., 99, 041112 (2011).
25. A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, IEEE Trans. Electron Devices, 57, 79 (2010).
26. S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, Appl. Phys. Lett., 96, 231101 (2010).
27. G. L. Martinez, M. R. Curiel, B. J. Skromme, and R. J. Molnar, J. Electron. Mater., 29, 325 (2000).
28. N. Tajik, Z. Peng, P. Kuyanov, and R. R. LaPierre, Nanotechnology, 22, 7 (2011).
29. M. Boroditsky, I. Gontijo, M. Jackson, R. Vrijen, E. Yablonovitch, T. Krauss, C.-C Cheng, A. Scherer, R. Bhat, and M. Krames, J. Appl. Phys., 87, 3497 (2000).