Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory

Nano Letters

Volumn 15, Issue 9, 2015, Pages 5875-5882

  Yang, Yiming ^a   Peng, Xingyue ^a   Kim, Hong Seok ^b   Kim, Taeho ^b   Jeon, Sanghun ^b   Kang, Hang Kyu ^c   Choi, Wonjun ^c   Song, Jindong ^c   Doh, Yong Joo ^b   Yu, Dong ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Korea University   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

hot carriers; indium arsenide; Nanowire; negative photoconductance; nonvolatile memory; scanning photocurrent microscopy

Indexed keywords

HOT CARRIERS; INDIUM; INDIUM ARSENIDE; NANOWIRES; PHOTOCONDUCTIVITY; TEMPERATURE; THRESHOLD VOLTAGE;

CONDUCTIVITY RECOVERY; DETRAPPING MECHANISM; GATE VOLTAGE THRESHOLD; LOW-POWER CONSUMPTION; NON-VOLATILE MEMORY; PHOTOCONDUCTANCE; SCANNING PHOTOCURRENT MICROSCOPIES; THERMALLY ACTIVATED;

NONVOLATILE STORAGE;

EID: 84941072122     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b01962     Document Type: Article

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