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Energy and Environmental Science

Volumn 9, Issue 2, 2016, Pages 504-516

Conductance and capacitance of bilayer protective oxides for silicon water splitting anodes

(8) Scheuermann, A G a Kemp, K W a Tang, K a Lu, D Q a Satterthwaite, P F a Ito, T a,b Chidsey, C E D c McIntyre, P C a

a Stanford University (United States)

b TOKYO ELECTRON LTD (Japan)

c STANFORD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; DIGITAL STORAGE; OXIDE FILMS; PHOTOELECTROCHEMICAL CELLS; SILICON OXIDES;

ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE MEASUREMENTS; DIELECTRIC INSULATORS; ELECTRICAL CONDUCTANCE; ELECTROCHEMICAL METHODS; ELECTRONIC CONDUCTORS; PROTECTION LAYERS; PROTECTIVE OXIDE FILMS;

CAPACITANCE;

CHEMICAL COMPOUND; CONDUCTIVITY; DIELECTRIC PROPERTY; ELECTRICAL CONDUCTIVITY; ELECTROCHEMICAL METHOD; ELECTRODE; INSULATION; OPTIMIZATION; OXYGEN; SILICON; SUBSTRATE;

EID: 84958036880 PISSN: 17545692 EISSN: 17545706 Source Type: Journal
DOI: 10.1039/c5ee02484f Document Type: Article

Times cited : (39)

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