Capacitance reconstruction from measured C-V in high leakage, nitride/oxide MOS

IEEE Transactions on Electron Devices

Volumn 47, Issue 10, 2000, Pages 1843-1850

  Choi, Chang Hoon ^a,b   Wu, Yider ^a   Goo, Jung Suk ^a   Yu, Zhiping ^a   Dutton, Robert W ^a  

^a Stanford University   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; GATES (TRANSISTOR); MATHEMATICAL MODELS; OPTIMIZATION; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

CAPACITANCE VOLTAGE CURVES; GATE CAPACITANCE;

MOSFET DEVICES;

EID: 0034293822     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.870559     Document Type: Article

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