SCOPUS 정보 검색 플랫폼

Volumn 7, Issue 10, 2014, Pages 3334-3337

Stabilization of n-cadmium telluride photoanodes for water oxidation to O2(g) in aqueous alkaline electrolytes using amorphous TiO2 films formed by atomic-layer deposition

(7) Lichterman, Michael F a,b Carim, Azhar I a McDowell, Matthew T a,b Hu, Shu a,b Gray, Harry B a,c Brunschwig, Bruce S c Lewis, Nathan S a,b,c

a California Institute of Technology (United States)

b CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

c CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CADMIUM SULFIDE; CADMIUM TELLURIDE; CORROSION PROTECTION; ELECTROCATALYSTS; ELECTRODES; ELECTROLYTES; ENERGY GAP; GALLIUM ARSENIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; NANOCRYSTALLINE MATERIALS; NICKEL OXIDE; OXIDATION; OXIDE FILMS; OXIDE MINERALS; SEMICONDUCTING CADMIUM TELLURIDE; THIN FILMS; TITANIUM DIOXIDE; WIDE BAND GAP SEMICONDUCTORS;

ALKALINE ELECTROLYTES; AQUEOUS ELECTROLYTE; BAND EDGE POSITION; ELECTRICALLY CONDUCTIVE; INTRINSICALLY SAFE; OXYGEN EVOLUTION; PHOTO-ELECTROCHEMICAL OXIDATIONS; SINGLE-CRYSTALLINE;

ATOMIC LAYER DEPOSITION;

ALLOY; AQUEOUS SOLUTION; ELECTROLYTE; FILM; PHOTOCHEMISTRY;

EID: 84907977951 PISSN: 17545692 EISSN: 17545706 Source Type: Journal
DOI: 10.1039/c4ee01914h Document Type: Article

Times cited : (113)

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