Silicon nitride film growth for advanced gate dielectric at low temperature employing high-density and low-energy ion bombardment

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 5, 1999, Pages 3129-3133

  Sekine, Katsuyuki ^a   Saito, Yuji ^a   Hirayama, Masaki ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033418093     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582016     Document Type: Article

References (15)

1. T. Ohmi, S. Imai, and T. Hashimoto, IEICE (J72-C-11 542) (1989) (in Japanese).
2. T. Ito, J. Kato, T. Nozaki, T. Nakamura, and H. Ishikawa, Appl. Phys. Lett. 38, 370 (1981).
3. A. Reisman, M. Berkenblit, A. Ray, and C. Merz, J. Electron. Mater. 13, 505 (1984).
4. H. Nakamura, M. Kaneko, and S. Matsumoto, Appl. Phys. Lett. 43, 691 (1983).
5. E. Paloure, K. Nauka, J. Langowski, and H. C. Gatos, Appl. Phys. Lett. 49, 97 (1986).
6. M. M. Mosleshi, C. Y. Fu, T. W. Sigmon, and K. C. Saraswat, J. Appl. Phys. 58, 2416 (1985).
7. Y. Kawai, N. Konishi, J. Watanabe, and T. Ohmi, Appl. Phys. Lett. 64, 2223 (1994).
8. M. Hirayama and T. Ohmi, Extended Abstracts of American Vacuum Symposium, 1996, p. 199.
9. N. Goto and M. Yamamoto, IEICE Jpn., Tech. Rep. A 80-57 (1980).
10. M. Ando, K. Sakurai, N. Goto, K. Arimura, and Y. Ito, IEEE Trans. Antennas Propag. 33, 1347 (1985).
11. J. Hirokawa, M. Ando, and N. Goto, Proc. IEEE 137, 249 (1990).
12. T. Ohmi, M. Miyasita, M. Itano, T. Imaoka, and I. Kawanabe, IEEE Trans. Electron Devices 39, 537 (1992).
13. M. Hirayama, T. Matsukawa, H. Arima, Y. Ohno, N. Tsubouthi, and H. Nakata, J. Electrochem. Soc. 131, 663 (1984).
14. H. Nakamura, M. Kaneko, S. Matsumoto, S. Fjita, and A. Sasaki, Appl. Phys. Lett. 43, 691 (1983).
15. T. P. Ma, IEEE Trans. Electron Devices 45, 680 (1998).