Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor

Journal of Physics Condensed Matter

Volumn 17, Issue 50, 2005, Pages 8057-8068

  Vexler, M I ^a   Tyaginov, S E ^a   Shulekin, A F ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ANALYSIS; COMPUTER SIMULATION; ELECTRON TUNNELING; HOLE MOBILITY; MOS DEVICES; SILICA; TRANSISTORS;

DIRECT-TUNNELLING HOLE CURRENT; HOLE EFFECTIVE MASS; MOS TUNNEL EMITTER TRANSISTOR; OXIDE THICKNESS;

THIN FILMS;

EID: 29044444169     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/17/50/023     Document Type: Article

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