ALD-TiO2 preparation and characterization for metal-insulator-silicon photoelectrochemical applications

ECS Transactions

Volumn 58, Issue 10, 2013, Pages 75-86

  Scheuermann, Andrew G ^a   Lawrence, John P ^a   Gunji, Marika ^a   Chidsey, Christopher E D ^b   McIntyre, Paul C ^a  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTROCHEMISTRY; MAGNETIC SEMICONDUCTORS; METAL INSULATOR BOUNDARIES; MIS DEVICES; OXIDE MINERALS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON; TITANIUM DIOXIDE; ULTRATHIN FILMS; VAPOR DEPOSITION;

CAPACITANCE-VOLTAGE METHOD; DIFFERENTIAL RESISTANCES; ELECTROCHEMICAL CHARACTERIZATIONS; ELECTROCHEMICAL MEASUREMENTS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; METAL INSULATOR SILICONS; PHOTOELECTROCHEMICAL APPLICATIONS; TETRAKIS(DIMETHYLAMIDO)TITANIUM;

ATOMIC LAYER DEPOSITION;

EID: 84904867992     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/05810.0075ecst     Document Type: Conference Paper

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