Versatile sputtering technology for Al 2O 3 gate insulators on graphene

Science and Technology of Advanced Materials

Volumn 13, Issue 2, 2012, Pages

  Friedemann, Miriam ^a   Woszczyna, Mirosław ^a   Müller, André ^a   Wundrack, Stefan ^a   Dziomba, Thorsten ^a   Weimann, Thomas ^a   Ahlers, Franz J ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC-SCALE DEFECTS; BI-LAYER; ELECTRICAL PERFORMANCE; FABRICATION METHOD; GATE INSULATOR; GRAPHENE DEVICES; HIGH BREAKDOWN VOLTAGE; LOW HYSTERESIS; PRECURSOR LAYER; RELATIVE DIELECTRIC CONSTANT; RESONANT SCATTERING; SPUTTERING TECHNOLOGY;

ALUMINUM; ATOMIC LAYER DEPOSITION; MONOLAYERS;

GRAPHENE;

EID: 84859599081     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1088/1468-6996/13/2/025007     Document Type: Article

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