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Volumn 109, Issue 10, 2011, Pages

Determination of hole effective mass in SiO2 and SiC conduction band offset using Fowler-Nordheim tunneling characteristics across metal-oxide-semiconductor structures after applying oxide field corrections

(1) Kumar Chanana, Ravi a,b

a GALGOTIAS COLLEGE OF ENGINEERING AND TECHNOLOGY (India)

b VANDERBILT UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TUNNELING; CONDUCTION BAND OFFSET; FLAT-BAND VOLTAGE; FOWLER-NORDHEIM; FOWLER-NORDHEIM TUNNELING; FREE ELECTRON MASS; HOLE EFFECTIVE MASS; HOLE TUNNELING; METAL OXIDE SEMICONDUCTOR STRUCTURES; MOS DIODE; TUNNELING PARAMETER;

CONDUCTION BANDS; ELECTRON MOBILITY; SILICON CARBIDE; SUPERCONDUCTING MATERIALS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79958799760 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3587185 Document Type: Conference Paper

Times cited : (38)

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