State-of-the-art infrared detector technology

State-of-the-Art Infrared Detector Technology

Volumn , Issue , 2014, Pages 1-262

  Kinch, Michael A ^a  

^a DRS Sensors and Targeting Systems Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM ALLOYS; INFRARED DETECTORS; VANADIUM ALLOYS;

COMPETING MATERIALS; DESIGN AND MANUFACTURES; DETECTOR TECHNOLOGY; DEVICE ARCHITECTURES; DIFFRACTION-LIMITED SYSTEMS; FUTURE PERFORMANCE; INFRARED FOCAL PLANE ARRAYS; SHORT WAVELENGTHS;

INFRARED RADIATION;

EID: 84956546987     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1117/3.2072367     Document Type: Book

References (193)

1. R. A. Smith, Semiconductors, Cambridge University Press, Cambridge, p. 90 (1968).
2. M. M. Blouke, C. B. Burgett, and R. L. Williams, "Sensitivity for extrinsic and intrinsic infrared detectors," Infrared Physics 13(1), 61-71 (1973).
3. Y. Darviot, A. Sorrentino, B. Joly, and B. Pajot, "Metallurgy and physical properties of mercury-doped germanium related to the performance of the infrared detector," Infrared Physics 7(1), 1-10 (1967).
4. R. L. Williams, "Relaxation phenomena in high-resistivity Ge:Hg," J. Applied Physics 38, 4802 (1967).
5. M. D. Petroff and M. G. Stapelbroek, "Blocked impurity band detectors," U.S. Patent No. 4,568,960 (1986).
6. M. G. Stapelbroek, H. H. Hogue, E. W. Atkins, D. B. Reynolds, and A. I. D'Souza, "Silicon for visible-to-VLWIR photon detection," Proc. SPIE 5074, 166-172 (2003) [doi: 10.1117/12.487290].
7. W. D. Lawson, S. Nielson, E. H. Putley, and A. S. Young, "Preparation and properties of HgTe and mixed crystals of HgTe-CdTe," J. Physics and Chemistry of Solids 9(3-4), 325-329 (1959).
8. D. Long, "On generation-recombination noise in infrared detector materials," Infrared Physics 7(3), 169-170 (1967).
9. F. D. Shepherd, Jr. and A. C. Yang, "Silicon Schottky retinae for infrared imaging," IEDM Technical Digest, p. 310 (1973).
10. W. F. Kosonocky, "Review of Schottky-barrier imager technology," Proc. SPIE 1308, 2-26 (1990) [doi: 10.1117/12.21713].
11. M. A. Kinch, R. A. Chapman, A. Simmons, D. D. Buss, and S. R. Borrello, "HgCdTe charge-coupled device technology," Infrared Physics 20(1), 1-20 (1980).
12. M. A. Kinch, "Fifty years of HgCdTe at Texas Instruments and beyond," Proc. SPIE 7298, 72982T (2009) [doi: 10.1117/12.819304].
13. R. A. Schiebel, J. Dodge, and R. Gooch, "Digital circuit on x 1/4 0.35 Hg1-xCdxTe," Electronics Letters 25, 530-531 (1989).
14. A. M. White, "Infrared detectors," U.S. Patent No. 4679063 (1987).
15. P. C. Klipstein, "XBn barrier photodetectors for high sensitivity and high operating temperature infrared sensors," Proc. SPIE 6940, 69402U (2008) [doi: 10.1117/12.778848].
16. M. A. Kinch, Fundamentals of Infrared Detector Materials, SPIE Press, Bellingham, WA, p. 18 (2007) [doi: 10.1117/3.741688].
17. L. Esaki and R. Tsu, "Superlattice and negative differential conductivity in semiconductors," IBM J. Research and Development 14(1), 61 (1970).
18. G. A. Sai-Halasz, R. Tsu, and L. Esaki, "A new semiconductor superlattice," Applied Physics Letters 30, 651 (1977).
19. D. L. Smith and C. Mailhiot, "Proposal for strained type II superlattice infrared detectors," J. Applied Physics 62, 2545 (1987).
20. J. N. Schulman and T. C. McGill, "The CdTe/HgTe superlattice:Proposal for a new infrared material," Applied Physics Letters 34, 663 (1979).
21. 1-xTe diodes," J. Vacuum Science & Technology A 8(2), 1251 (1990).
22. J. Beck, M. Woodall, R. Scritchfield, M. Ohlson, L. Wood, P. Mitra, and J. Robinson, "Gated IR imaging with 128 - 128 HgCdTe electron avalanche photodiode FPA, J. Electronic Materials 37(9), 1334-1343 (2008).
23. M. A. Kinch, "A theoretical model for the HgCdTe electron avalanche photodiode," J. Electronic Materials 37(9), 1453-1469 (2008).
24. J. Rothman, L. Mollard, S. Goût, L. Bonnefond, and J. Wlassow, "History-dependent impact ionization theory applied to HgCdTe e-APDs," J. Electronic Materials 40(8), 1757-1768 (2011).
25. G. C. Holst and R. G. Driggers, "Small detectors in infrared system design," Optical Engineering 51(9), 096401 (2012) [doi: 10.1117/1.OE.51.9.096401].
26. M. A. Kinch, "The rationale for ultra-small pitch IR systems," Proc. SPIE 9070, 907032 (2014) [doi: 10.1117/12.2051335].
27. M. A. Kinch, Fundamentals of Infrared Detector Materials, SPIE Press, Bellingham, WA, p. 81 (2007) [doi: 10.1117/3.741688].
28. J. S. Bendat, Principles and Application of Random Noise Theory, Wiley, New York, p. 141 (1958).
29. F. Stern, "Elementary Theory of the Optical Properties of Solids," in Solid State Physics 15, F. Seitz and D. Turnbull, Eds., Academic Press, New York, p. 366 (1963).
30. W. van Roosbroeck and W. Shockley, "Photon-radiative recombination of electrons and holes in germanium," Physical Review 94, 1558 (1954).
31. R. G. Humphreys, "Radiative lifetime in semiconductors for infrared detection," Infrared Physics 26(6), 337-342 (1986).
32. K. Jóźwikowski, M. Kopytko, and A. Rogalski, "Numerical estimations of carrier generation: recombination processes and the photon recycling effect in HgCdTe heterostructure photodiodes," J. Electronic Materials 41(10), 2766-2774 (2013).
33. P. Berdahl, V. Malutenko, and T. Morimoto, "Negative luminescence of semiconductors," Infrared Physics 29(2-4), 667-672 (1989).
34. T. Ashley, C. T. Elliott, N. T. Gordon, R. S. Hall, A. D. Johnson, and G. J. Pryce, "Negative luminescence from In1-xAlxSb and CdxHg1-xTe diodes," Infrared Physics and Technology 36, 1037-1044 (1995).
35. N. T. Gordon, R. S. Hall, C. L. Jones, C. D. Maxey, N. E. Metcalfe, R. A. Catchpole, and A. M. White, "MCT infrared detectors with close to radiatively limited performance at 240 K in the 3-5 mm band," J. Electronic Materials 29(6), 818-822 (2000).
36. J. S. Blakemore, Semiconductor Statistics, Pergamon Press, New York, p. 221 (1962).
37. M. A. Kinch, M. J. Brau, and A. Simmons, "Recombination mechanisms in 8-14-m HgCdTe," J. Applied Physics 44, 1649 (1973).
38. S. Krishnamurthy and T. N. Casselman, "A detailed calculation of the auger lifetime in p-type HgCdTe," J. Electronic Materials 29(6), 828-831 (2000).
39. A. R. Beattie, private communication.
40. W. Shockley and W. T. Read, Jr., "Statistics of the recombinations of holes and electrons," Physical Review 87, 835 (1952).
41. R. N. Hall, "Germanium rectifier characteristics," Physical Review 83, 228 (1951).
42. C.-T. Sah, R. N. Noyce, and W. Shockley, "Carrier generation and recombination in p-n junctions and p-n junction characteristics," Proc. IRE 45, 1228-1243 (1957).
43. D. K. Blanks, J. D. Beck, M. A. Kinch, and L. Colombo, "Band-to-band tunnel processes in HgCdTe: Comparison of experimental and theoretical studies," J. Vacuum Science & Technology A 6, 2790 (1988).
44. C. T. Sah, "Electronic processes and excess currents in gold-doped narrow silicon junctions," Physical Review 123, 1594 (1961).
45. K. F. Brennan, Physics of Semiconductors, Cambridge University Press, Cambridge, p. 513 (1999).
46. S. M. Sze, Physics of Semiconductor Devices, Wiley, New York, p. 431 (1969).
47. M. A. Kinch, Fundamentals of Infrared Detector Materials, SPIE Press, Bellingham, WA, p. 139 (2007) [doi: 10.1117/3.741688].
48. J. S. Bendat, Principles and Application of Random Noise Theory, Wiley, New York, p. 141 (1958).
49. A. L. McWhorter, 1/f Noise and Germanium Surface Properties," in Semiconductor Surface Physics, R. H. Kingston, Ed., Pennsylvania Univ. Press, Philadelphia, pp. 207-228 (1957).
50. S. T. Hsu, "Surface state related 1/f noise in p-n junctions," Solid-State Electronics 13, 843-855 (1970).
51. M. A. Kinch, C.-F. Wan, H. Schaake, and D. Chandra, "Universal 1/f noise model for reverse biased diodes," Applied Physics Letters 94, 193508 (2009).
52. R. A. Schiebel, "A model for 1/f noise in-diffusion current based on surface recombination velocity fluctuations and insulator trapping," IEEE Transactions on Electron Devices 41(5), 768-778 (1994).
53. M. A. Kinch, R. L. Strong, and C. A. Schaake, "1/f noise in HgCdTe focal-plane arrays," J. Electronic Materials 42(11), 3243-3244 (2013).
54. S. M. Johnson, D. R. Rhiger, J. P. Rosbeck, J. M. Peterson, S. M. Taylor, and M. E. Boyd, "Effect of dislocations on the electrical and optical properties of long-wavelength infrared HgCdTe photovoltaic detectors," J. Vacuum Science & Technology B 10(4), 1499 (1992).
55. R. S. List, "Formation and electrical effects of process induced dislocations in HgCdTe," J. Vacuum Science & Technology B 10(4), 1651 (1992).
56. I.M. Baker and C. D.Maxey, "Summary of HgCdTe 2D array technology in the U.K.," J. Electronic Materials 30(6), 682-689 (2001).
57. H. Welker and H. Weiss, "Group III-Group V Compounds," in Solid State Physics 3, F. Seitz and D. Turnbull, Eds., Academic Press, New York, p. 1 (1956).
58. J. W. Matthews and A. E. Blakeslee, "Defects in epitaxial multilayers: I. Misfit dislocations," J. Crystal Growth 27, 118-125 (1974).
59. "Defects in epitaxial multilayers: II. Dislocation pile-ups, threading dislocations, slip lines and cracks," J. Crystal Growth 29, 273-280 (1975).
60. "Defects in epitaxial multilayers: III. Preparation of almost perfect multilayers," J. Crystal Growth 32, 265-273 (1976).
61. 1-xTe (0 x 1) crystals," J. Materials Science 25(3), 1877-1855 (1990).
62. C. Fulk, T. Parados, P. Lamarre, S. Tobin, P. LoVecchio, and J. Markunas, "Critical thickness of exponentially and linearly graded HgCdTe/CdZnTe," J. Electronic Materials 38(8), 1690-1697 (2009).
63. N. J. Quitoriano and E. A. Fitzgerald, "Alternative slip system activation in lattice-mismatched InP/InGaAs interfaces," J. Applied Physics 101, 073509 (2007).
64. M. A. Kinch, Fundamentals of Infrared Detector Materials, SPIE Press, Bellingham, WA, p. 61 (2007) [doi: 10.1117/3.741688].
65. xTe," J. Electronic Materials 29(6), 729-731 (2000).
66. G. L. Destéfanis, "Electrical doping of HgCdTe by ion implantation and heat treatment," J. Crystal Growth 86(1-4), 700-722 (1988).
67. D. Chandra, H. F. Schaake, and M. A. Kinch, "Low-temperature annealing of (Hg,Cd)Te," J. Electronic Materials 32(7), 810-815 (2003).
68. P. Mitra, F. C. Case, M. B. Reine, T. Parodos, S. P. Tobin, and P. W. Norton, "MOVPE growth of HgCdTe for high performance 3-5 mm photodiodes operating at 100-180 K," J. Electronic Materials 28(6), 589-595 (1999).
69. D. J. Hall, L. Buckle, N. T. Gordon, J. Giess, J. E. Hails, J. W. Cairns, R. M. Lawrence, A. Graham, R. S. Hall, C. Maltby, and T. Ashley, "Longwavelength infrared focal plane arrays fabricated from HgCdTe grown on silicon substrates," Proc. SPIE 5406, 317-322 (2004) [doi: 10.1117/12.545003].
70. C. D. Maxey, J. C. Fitzmaurice, H. W. Lau, L. G. Hipwood, C. S. Shaw, C. L. Jones, and P. Capper, "Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays," J. Electronic Materials 35(6), 1275-1282 (2006).
71. xTe," J. Physics & Chemistry of Solids Supplement 32, 461 (1971).
72. xTe" J. Applied Physics 53(10), 7099 (1982).
73. xTe," J. Applied Physics 54, 1639 (1983).
74. D. L. Carter, M. A. Kinch, and D. D. Buss, "Optical phonons and dielectric constants in Hg0.796Cd0.204Te," J. Physics & Chemistry of Solids Supplement 32, 273-277 (1971).
75. F. Stern, "Elementary Theory of the Optical Properties of Solids," in Solid State Physics 15, F. Seitz and D. Turnbull, Eds., Academic Press, New York, p. 366 (1963).
76. J. Antoszewski, D. J. Seymour, L. Faraone, J. R. Meyer, and C. A. Hoffman, "Magneto-transport characterization using quantitative mobility-spectrum analysis," J. Electronic Materials 24(9), 1255-1262 (1995).
77. T. Wong, "Theoretical and Experimental Study of the Anomalous Hall Properties of (Hg,Cd)Te," M.Sc. Thesis, Massachusetts Institute of Technology (1974).
78. R. Stratton, "The influence of interelectronic collisions on conduction and breakdown in polar crystals," Proc. Royal Society of London A 246, 406-422 (1958).
79. H. Brooks, "Theory of electrical properties of germanium and silicon," Advances In Electronics & Electron Physics 7, 85-182 (1955).
80. S. Krishnamurthy, A. Sher, and A.-B. Chen, "Generalized Brooks' formula and the electron mobility in SixGe1_x alloys," Applied Physics Letters 47, 160 (1985).
81. M. A. Kinch, M. J. Brau, and A. Simmons, "Recombination mechanisms in 8-14-m HgCdTe," J. Applied Physics 44, 1649 (1973).
82. S. Krishnamurthy and T. N. Casselman, "A detailed calculation of the auger lifetime in p-type HgCdTe," J. Electronic Materials 29(6), 828-831 (2000).
83. A. R. Beattie, private communication.
84. A. M. White, "Recombination in a graded n-nþ contact region in a narrow-gap semiconductor," J. Physics C: Solid State Physics 17, 4889-4896 (1984).
85. DRS internal data.
86. J. G. Pellegrino, R. DeWames, P. Perconti, C. Billman, and P. Maloney, "HOT MWIR HgCdTe performance on CZT and alternative substrates," Proc. SPIE 8353, 83532X (2012) [doi: 10.1117/12.923836].
87. J. L. Elkind, "Ion mill damage in n-HgCdTe," J. Vacuum Science & Technology B 10(4), 1460-1465 (1992).
88. xTe alloys using resonant impact-ionization spectroscopy," J. Vacuum Science & Technology B 10(4), 1466 (1992).
89. M. A. Kinch, Fundamentals of Infrared Detector Materials, SPIE Press, Bellingham WA, p. 39 (2007) [doi: 10.1117/3.741688].
90. M. C. Chen, L. Colombo, J. A. Dodge, and J. H. Tregilgas, "The minority carrier lifetime in doped and undoped p-type Hg0.78Cd0.22Te liquid phase epitaxy films," J. Electronic Material 24(5), 539-544 (1995).
91. D. E. Cooper and W. A. Harrison, "Possible negative-U properties of the cation vacancy in HgCdTe," J. Vacuum Science & Technology A 8(2), 1112 (1990).
92. F.Gemain, I.C.Robin, S. Brochen,M.DeVita,O.Gravrand, andA.Lusson, "Optical and electrical studies of the double acceptor levels of the mercury vacancies in HgCdTe," J. Electronic Materials 41(10), 2867-2873 (2012).
93. C. A. Schaake, private communication.
94. 1-xTe diodes," J. Vacuum Science & Technology A 8(2), 1251 (1990).
95. J. Beck, M. Woodall, R. Scritchfield, M. Ohlson, L. Wood, P. Mitra, and J. Robinson, "Gated IR imaging with 128 _ 128 HgCdTe electron avalanche photodiode FPA," J. Electronic Materials 37(9), 1334-1343 (2008).
96. G. Perrais, J. Rothman, G. Destefanis, and J.-P. Chamonal, "Impulse response time measurement in Hg0.7Cd0.3Te MWIR avalanche photodiodes," J. Electronic Materials 37(9), 1261-1273 (2008).
97. M. B. Reine, J. W. Marciniec, K. K. Wong, T. Parodos, J. D. Mullarkey, P. A. Lamarre, S. P. Tobin, R. W. Minich, K. A. Gustavsen, M. Compton, and G. M. Williams, "Characterization of HgCdTe MWIR back-illuminated electron-initiated avalanche photodiodes," J. Electronic Materials 37(9), 1376-1386 (2008).
98. M. A. Kinch, "A theoretical model for the HgCdTe electron avalanche photodiode," J. Electronic Materials 37(9), 1453-1469 (2008).
99. J. Rothman, L. Mollard, S. Goût, L. Bonnefond, and J. Wlassow, "History-dependent impact ionization theory applied to HgCdTe e-APDs," J. Electronic Materials 40(8), 1757-1768 (2011).
100. J. Rothman, L. Mollard, S. Bosson, G. Vojetta, K. Foubert, S. Gatti, G. Bonouvrier, F. Salveti, A. Kerlain, and O. Pacaud, "Short-wave infrared HgCdTe avalanche photodiodes," J. Electronic Materials 41(10), 2928-2936 (2012).
101. K. F. Brennan, Physics of Semiconductors, Cambridge University Press, Cambridge, p. 513 (1999).
102. E. Antončik and J. Tauc, "Quantum Efficiency of the Internal Photoelectric Effect in InSb," in Semiconductors and Semimetals 2, R. K. Willardson and A. C. Beer, Eds., Academic Press, New York, pp. 245-262 (1966).
103. C. Schaake and J. D. Beck, DRS Technologies, Inc., private communication.
104. M. A. Kinch, Fundamentals of Infrared Detector Materials, SPIE Press, Bellingham, WA, p. 115 (2007) [doi: 10.1117/3.741688].
105. M. A. Kinch, C.-F. Wan, H. Schaake, and D. Chandra, "Universal 1/f noise model for reverse biased diodes," Applied Physics Letters 94, 193508 (2009).
106. M. C. Chen, A. Turner, L. Colombo, and D. Chandra, "The magnetic field dependence of R0A products in n-on-p homojunctions and p-on-n heterojunctions from Hg0.78Cd0.22Te liquid phase epitaxy films," J. Electronic Materials 24(9), 1249-1253 (1995).
107. R. Sporken, S. Sivananthan, J. P. Faurie, D. H. Ehlers, J. Fraxedas, L. Ley, J. J. Pireaux, and R. Caudano, "Temperature-dependent photoemission study of the HgTe-CdTe valence-band discontinuity," J. Vacuum Science & Technology A 7, 427 (1989).
108. xTe superlattices and its temperature dependence," Physical Review B 68, 035202 (2003).
109. T. F. Kuech and J. O. McCaldin, "HgTe/CdTe heterojunctions: A latticemismatched Schottky barrier structure," J. Applied Physics 53(2), 3121-3128 (1982).
110. G. Bastard, "Superlattice band structure in the envelope-function approximation," Physical Review B 24, 5693 (1981).
111. "Theoretical investigations of superlattice band structure in the envelope-function approximation," Physical Review B 25, 7584 (1982).
112. D. L. Smith, T. C. McGill, and J. N. Schulman, "Advantages of the HgTe-CdTe superlattice as an infrared detector material," Applied Physics Letters 43, 180 (1983).
113. P. M. Lui, H. Ehrenreich, and N. F. Johnson, "A possible resolution of the valence-band offset controversy in HgTe/CdTe superlattices," J. Vacuum Science & Technology A 7, 424 (1989).
114. C. H. Grein, H. Jung, R. Singh, and M. E. Flatté, "Comparison of normal and inverted band structure HgTe/CdTe superlattices for very long wavelength infrared detectors" J. Electronic Materials 34(6), 905-908 (2005).
115. M. A. Kinch and M. W. Goodwin, "II-VI infrared superlattices," J. Applied Physics 58(11), 4455-4458 (1985).
116. K. A. Harris, R. W. Yanka, L. M. Mohnkern, A. R. Reisinger, T. H. Myers, Z. Yang, Z. Yu, S. Hwang, and J. F. Schetzina, "Properties of (211)B HgTe-CdTe superlattices grown by photon-assisted molecularbeam epitaxy," J. Vacuum Science & Technology B 10, 1574 (1992).
117. M. A. Mattson, T. H. Myers, M. Richards-Babb, and J. R. Meyer, "Evaluation of low-temperature interdiffusioon coefficients in Hg-based superlattices by monitoring the E1 reflectance peak," J. Electronic Materials 26(6), 578-583 (1997).
118. http://www.ioffe.ru/SVA/NSM/Semicond/index.html.
119. A. Rogalski and M. Kimata, Infrared Photon Detectors, SPIE Press, Bellingham, WA, p. 352 (1995).
120. G. C. Osbourn, "InAsSb strained-layer superlattices for long-wavelength detector applications," J. Vacuum Science & Technology B 2, 176-178 (1984).
121. S. R. Kurtz, G. C. Osbourn, R. M. Biefeld, L. R. Dawson, and H. J. Stein, "Extended infrared response of InAsSb strained-layer superlattices," Applied Physics Letters 52, 831 (1988).
122. D. L. Smith and C. Mailhiot, "Proposal for strained type II superlattice infrared detectors," J. Applied Physics 62(6), 2545-2548 (1987).
123. D. Wang, Y. Lin, D. Donetsky, L. Shterengras, G. Kipshidze, G. Belenky, W. L. Sarney, H. Hier, and S. P. Svensson, "Unrelaxed bulk InAsSb with novel absorption, carrier transport, and recombination properties for MWIR and LWIR photodetectors," Proc. SPIE 8353, 835312 (2012) [doi: 10.1117/12.919451].
124. H. Ehrenreich, "Transport of electrons in intrinsic InSb," J. Physics & Chemistry of Solids 9(2), 129-148 (1959).
125. A. R. Beattie and P. T. Landsberg, "Auger effect in semiconductors," Proc. Royal Society London A 249, 16-29 (1959).
126. "One-dimensional overlap functions and their application to auger recombination in semiconductors," Proc. Royal Society London A 258, 486-495 (1960).
127. S. R. Jost, V. F. Meikleham, and T. H. Myers, "InSb: A key material for IR detector applications," 1986 MRS Fall Meeting: Materials for Infrared Detectors and Sources, Materials Research Society Symposium Proc. 90, 429-436 (1987).
128. E. H. Steenbergen, B. C. Connelly, G. D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J. M. Fastenau, A. W. K. Liu, S. Elhamri, O. O. Cellek, and Y.-H. Zhang, "Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb," Applied Physics Letters 99, 251110 (2011).
129. G. A. Sai-Halasz, R. Tsu, and L. Esaki, "A new semiconductor superlattice," Applied Physics Letters 30, 651 (1977).
130. D. Z.-Y. Ting, A. Soibel, L. Höglund, J. Nguyen, C. J. Hill, A. Khoshakhlagh, and S. Gunapala, "Type-II Superlattice Infrared Detectors," in Semiconductors and Semimetals 84, S. D. Gunapala, D. R. Rhiger, and C. Jagadish, Eds., Elsevier Ltd., Oxford, pp. 1-57 (2011).
131. G. Ariyawansa, J. M. Duran, M. Grupen, J. E. Scheihing, T. R. Nelson, and M. T. Eismann, "Multispectral imaging with type II superlattice detectors," Proc. SPIE 8353, 83530E (2012) [doi: 10.1117/12.917300].
132. D. Z.-Y. Ting, A. Soibel, A. Khoshakhlagh, J. Nguyen, L. Höglund, S. A. Keo, J. M. Mumolo, and S. D. Gunapala, "Exclusion, extraction, and junction placement effects in the complementary barrier infrared detector," Applied Physics Letters 102, 121109 (2013).
133. D. Z.-Y. Ting, C. J. Hill, A. Soibel, S. A. Keo, J. M. Mumolo, J. Nguyen, and S. D. Gunapala, "A high-performance long wavelength superlattice complementary barrier infrared detector," Applied Physics Letters 95, 023508 (2009).
134. R. T. Bate, D. L. Carter, and J. S. Wrobel, "Paraelectric behavior of PbTe," Physical Review Letters 25, 159 (1970).
135. F. A. Junga, K. F. Cuff, J. S. Blakemore, and E. R. Washwell, "Significance of band structure in determining radiative recombination and laser action in the lead salt semiconductors," Physics Letters 13, 103-105 (1964).
136. I. Melngailis and T. C. Harman, "Single-Crystal Lead-Tin Chalcogenides," in Semiconductors and Semimetals 5, R. K. Willardson and A. C. Beer, Eds., Academic Press, New York, p. 111 (1970).
137. X. J. Wang, C. Fulk, F. H. Zhao, D. H. Li, S. Mukherjee, Y. Chang, R. Sporken, R. Klie, Z. Shi, C. H. Grein, and S. Sivananthan, "Characterization of PbSnSe/CdTe/Si (211) epilayers grown by molecular beam epitaxy," J. Electronic Materials 37(9), 1200 (2008).
138. H. Zogg, M. Arnold, F. Felder, M. Rahim, C. Ebneter, I. Zasavitskiy, N. Quack, S. Blunier, and J. Dual, "Epitaxial lead chalcogenides on Si for mid-IR detectors and emitters including cavities," J. Electronic Materials 37(9), 1497-1503 (2008).
139. M. R. Johnson, R. A. Chapman, and J. S. Wrobel, "Detectivity limits for diffused junction PbSnTe," Infrared Physics 15(4), 317-329 (1975).
140. I. Melngailis and T. C. Harman, "Photoconductivity in single-crystal Pb1_xSnxTe," Applied Physics Letters 13, 180 (1968).
141. W. E. Tennant, D. Lee, M. Zandian, E. Piquette, and M. Carmody, "MBE HgCdTe technology: A very general solution to IR detection, described by 'Rule 07,' a very convenient heuristic," J. Electronic Materials 37, 1406 (2008).
142. O. Gravrand, L. Mollard, O. Boulade, V. Moreau, E. Sanson, and G. Destéfanis, "Ultralow dark current CdHgTe FPAs in the SWIR range at CEA and Sofradir," Proc. SPIE 8353, 83530C (2012) [doi: 10.1117/12.921859].
143. C. Maxey, private communication.
144. C. Fulk, T. Parados, P. Lamarre, S. Tobin, P. LoVecchio, and J.Markunas, "Critical thickness of exponentially and linearly graded HgCdTe/CdZn/Te," J. Electronic Materials 38(8), 1690-1697 (2009).
145. L. Pillans, R. M. Ash, L. Hipwood, and P. Knowles, "MWIR mercury cadmium telluride detectors for high operating temperatures," Proc. SPIE 8353, 83532W (2012) [doi: 10.1117/12.919015].
146. R. L. Strong, M. A. Kinch, and J. M. Armstrong, "Temperature dependence of 1/f noise, defects, and dark current in small pitch MWIR and LWIR HDVIP® HgCdTe FPAs," Proc. SPIE 8704, 87042O (2013) [doi: 10.1117/12.20158916].
147. DRS Technologies, Inc. unpublished data.
148. J. D. Beck, R. Scritchfield, P. Mitra, W. Sullivan III, A. D. Gleckler, R. Strittmatter, and R. J. Martin, "Linear-mode photon counting with the noiseless gain HgCdTe e-APD," Proc. SPIE 8033, 80330N (2011) [doi: 10.1117/12.886161].
149. J. D. Beck, M. Woodall, R. Scritchfield, M. Ohlson, L. Wood, P. Mitra, and J. Robinson, "Gated IR imaging with 128 _ 128 HgCdTe electron avalanche phododiode FPA," J. Electronic Materials 37(9), 1334-1343 (2008).
150. A. Ashcroft and I. Baker, "Developments in HgCdTe avalanche photodiode technology and applications," Proc. SPIE 7660, 76603C (2010) [doi: 10.1117/12.850133].
151. I. M. Baker, S. D. Duncan, and J. W. Copley, "A low-noise laser-gated imaging system for long-range target detection," Proc. SPIE 5406, 133-144 (2004) [doi: 10.1117/12.541484].
152. J. Rothman, E. de Borniol, S. Bisotto, L. Mollard, F. Guellec, F. Pistone, S. Courtas, and X. Lefoule, "HgCdTe APD-focal plane array development at DEFIR for low flux and photon-counting applications," Quantum of Quasars International Workshop, Proc. of Science QQ09 009 (2009).
153. E. de Borniol, J. Rothman, F. Guellec, G. Vojetta, G. Destéfanis, and O. Pacaud, "Active three-dimensional and thermal imaging with a 30-mm pitch 320 - 256 HgCdTe avalanche photodiode focal plane array," Optical Engineering 51, 061305 (2012) [doi: 10.1117/1.OE.51.6.061305].
154. J. Rothman, L. Mollard, S. Bosson, G. Vojetta, K. Foubert, S. Gatti, G. Bonouvrier, F. Salveti, A. Kerlain, and O. Pacaud, "Short-wave infrared HgCdTe avalanche photodiodes," J. Electronic Materials 41(10), 2928-2936 (2012).
155. D. Wang, Y. Lin, D. Donetsky, L. Shterengras, G. Kipshidze, G. Belenky, W. L. Sarney, H. Hier, and S. P. Svensson, "Unrelaxed bulk InAsSb with novel absorption, carrier transport, and recombination properties for MWIR and LWIR photodetectors," Proc. SPIE 8353, 835312 (2012) [doi: 10.1117/12.919451].
156. T. Ashley, T.M. Burke,M. T. Emeny, N. T. Gordon, D. J. Hall, D. J. Lees, J. C. Little, and D. Milner, "Epitaxial InSb for elevated temperature operation of large IR focal plane arrays," Proc. SPIE 5074, 95-102 (2003) [doi: 10.1117/12.503527].
157. I. Shtrichman, D. Aranov, M. ben Ezra, I. Barkai, E. Berkowicz, M. Brumer, R. Fraenkel, A. Glozman, E. Jacobsohn, O. Klin, P. Klipstein, I. Lukomsky, L. Shkedy, N. Snapi, M. Yassen, and E. Weiss, "High operating temperature epi-InSb and XBn-InAsSb photodetectors," Proc. SPIE 8353, 83532Y (2012) [doi: 10.1117/12.918324].
158. R. DeWames, R. Littleton, C. Billman, J. Pellegrino, S. Horn, and R. Balcerak, "Properties of planar In0.53Ga0.47As and Hg0.39Cd0.61Te pþn photodiodes for low light level imaging," Extended Abstracts of the 2008 U.S. Workshop on the Physics and Chemistry of II-VI Materials, Nov. 11-13, 2008, Las Vegas, Nevada.
159. R. Fraenkel, D. Aronov, Y. Benny, E. Berkowicz, L. Bykov, Z. Calahorra, T. Fishman, A. Giladi, E Ilan, P. Klipstein, L. Langof, I. Lukomsky, D. Mistele, U. Mizrahi, D. Nussinson, A. Twitto, M. Yassen, and A. Zemel, "SCD's cooled and uncooled photodetectors forNIR SWIR," Proc. SPIE 8353, 835305 (20012) [doi: 10.1117/12.918098].
160. H. Yuan, M. Meixell, J. Zhang, J. Kimchi, and L. C. Kilmer, "Low dark current small pixel large format InGaAs 2D photodetectors array development at Teledyne Judson Technologies," Proc. SPIE 8353, 835309 (2012) [doi: 10.1117/12.921232].
161. A. Rouvié, J.-L. Reverchon, O. Huet, A. Djedidi, J.-A. Robo, J.-P. Truffer, T. Bria, M. Pires, J. Decobert, and E. Costard, "InGaAs focal plane array developments at III-V Lab," Proc. SPIE 8353, 835308 (2012) [doi: 10.1117/12.921134].
162. A. D. Hood, M. H. MacDougal, J. Manzo, D. Follman, and J. C. Geske, "Large-format InGaAs focal plane arrays for SWIR imaging," Proc. SPIE 8353, 83530A (2012) [doi: 10.1117/12.921475].
163. E. H. Steenbergen, B. C. Connelly, G. D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J. M. Fastenau, A. W. K. Liu, S. Elhamri, O. O. Cellek, and Y.-H. Zhang, "Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb," Applied Physics Letters 99, 251110 (2011).
164. P. C. Klipstein, Y. Livneh, A. Glozman, S. Grossman, O. Klim, N. Snapi, and E. Weiss, "Modeling InAs/GaSb and InAs/InAsSb superlattice infrared detectors," J. Electronic Materials 43(8), 2984-2990 (2014).
165. R. Rehm, M. Walther, J. Schmitz, F. Rutz, A. Wörl, R. Scheibner, and J. Ziegler, "Type II superlattices: the Fraunhofer perspective," Proc. SPIE 7660, 76601G (2010) [doi: 10.1117/12.850172].
166. D. Z.-Y. Ting, A. Soibel, A. Khoshakhlagh, J. Nguyen, L. Höglund, S. A. Keo, J. M. Mumolo, and S. D. Gunapala, "Exclusion, extraction, and junction placement effects in the complementary barrier infrared detector," Applied Physics Letters 102, 121109 (2013).
167. S. B. Rafol, A. Soibel, A. Khoshakhlagh, J. Nguyen, J. K. Liu, J. Mumolo, S. A. Keo, L. Hoeglund, D. Z. Ting, and S. D. Gunapala, "Performance of a 1/4 VGA format long-wavelength infrared antimodesbased superlattice focal plane array," IEEE J. Quantum Electronics 48(7), 878-884 (2012).
168. A. Soibel, S. B. Rafol, A. Khoshakhlagh, J. Nguyen, L. Hoeglund, S. A. Keo, J. M. Mumolo, J. Liu, A. Liao, D. Z.-Y. Ting, and S. D. Gunapala, "Long wavelength infrared superlattice detectors and FPAs based on CBIRD design," IEEE Photonics Technology Letters 25(9), 875-878 (2013).
169. D. Z.-Y. Ting, A. Soibel, L. Höglund, J. Nguyen, C. J. Hill, A. Khoshakhlagh, and S. Gunapala, "Type-II Superlattice Infrared Detectors," in Semiconductors and Semimetals 84, S. D. Gunapala, D. R. Rhiger and C. Jagadish, Eds., Elsevier Ltd., Oxford, pp. 1-57 (2011).
170. P. C. Klipstein, Y. Gross, D. Aronov, M. ben Ezra, E. Berkowicz, Y. Cohen, R. Fraenkel, A. Glozman, S. Grossman, O. Klin, I. Lukomsky, T. Markowitz, L. Shkedy, I. Shtrichman, N. Snapi, A. Tuito, M. Yassen, and E. Weiss, "Low SwaP MWIR detector based on XBn focal plane array," Proc. SPIE 8704, 87041S (2013) [doi: 10.1117/12.2015747].
171. L. Pillans, R. M. Ash, L. Hipwood, and P. Knowles, "MWIR mercury cadmium telluride detectors for high operating temperatures," Proc. SPIE 8353, 83532W (2012) [doi: 10.1117/12.919015].
172. R. L. Strong, M. A. Kinch, and J. M. Armstrong, "Performance of 12-mm to 15-mm-pitch at MWIR and LWIR HgCdTe FPAs at elevated temperatures," J. Electronic Materials 42, 3103-3107 (2013).
173. A. Manissadjian, L. Rubaldo, Y. Rebeil, A. Kerlain, D. Brellier, and L. Mollard, "Improved IR detectors to swap heavy systems for SWaP," Proc. SPIE 8353, 835334 (2012) [doi: 10.1117/12.921879].
174. R. L. Strong and M. A. Kinch, "Quantification and modeling of RMS noise distributions in HDVIP® infrared focal plane arrays," J. Electronics Materials 43(8), 2824-2830 (2014).
175. I. Shtrichman, D. Aranov, M. ben Ezra, I. Barkai, E. Berkowicz, M. Brumer, R. Fraenkel, A. Glozman, E. Jacobsohn, O. Klin, P. Klipstein, I. Lukomsky, L. Shkedy, N. Snapi, M. Yassen, and E. Weiss, "High operating temperature epi-InSb and XBn-InAsSb photodetectors," Proc. SPIE 8353, 83532Y (2012) [doi: 10.1117/12.918324].
176. D. Z.-Y. Ting, C. J. Hill, A. Soibel, S. A. Keo, J. M. Mumolo, J. Nguyen, and S. D. Gunapala, "A high-performance long wavelength superlattice complementary barrier infrared detector," Applied Physics Letters 95, 023508 (2009).
177. S. B. Rafol, A. Soibel, A. Khoshakhlagh, J. Nguyen, J. K. Liu, J. Mumolo, S. A. Keo, L. Hoeglund, D. Z. Ting, and S. D. Gunapala, "Performance of a 1/4 VGA format long-wavelength infrared antimodesbased superlattice focal plane array," IEEE J. Quantum Electronics 48(7), 878-884 (2012).
178. A. Soibel, S. B. Rafol, A. Khoshakhlagh, J. Nguyen, L. Hoeglund, S. A. Keo, J. M. Mumolo, J. Liu, A. Liao, D. Z-Y. Ting, and S. D. Gunapala, "Long wavelength infrared superlattice detectors and FPAs based on CBIRD design," IEEE Photonics Technology Letters 25(9), 875-878 (2013).
179. N. Baier, L. Mollard, O. Gravrand, G. Bourgeois, J.-P. Zanatt, G. Destefanis, O. Boulade, V. Moreau, F. Pinsard, L. Tauziède, A. Bardoux, L. Rubaldo, A. Kerlain, and J.-C. Peyrard, "MCT plananr p-on-n LW and VLW IRFPAs," Proc. SPIE 8704, 87042P (2013) [doi: 10.1117/12.2016369].
180. R. Fraenkel, D. Aronov, Y. Benny, E. Berkowicz, L. Bykov, Z. Calahorra, T. Fishman, A. Giladi, E. Ilan, P. Klipstein, L. Langof, I. Lukomsky, D. Mistele, U. Mizrahi, D. Nussinson, A. Twitto, M. Yassen, and A. Zemel, "SCD's cooled and uncooled photodetectors for NIR SWIR," Proc. SPIE 8353, 835305 (20012) [doi: 10.1117/12.918098].
181. P. C. Klipstein, Y. Gross, D. Aronov, M. ben Ezra, E. Berkowicz, Y. Cohen, R. Fraenkel, A. Glozman, S. Grossman, O. Klin, I. Lukomsky, T. Markowitz, L. Shkedy, I. Shtrichman, N. Snapi, A. Tuito, M. Yassen, and E. Weiss, "Low SwaP MWIR detector based on XBn focal plane array," Proc. SPIE 8704, 87041S (2013) [doi: 10.1117/12.2015747].
182. L. Pillans, R. M. Ash, L. Hipwood, and P. Knowles, "MWIR mercury cadmium telluride detectors for high operating temperatures," Proc. SPIE 8353, 83532W (2012) [doi: 10.1117/12.919015].
183. R. L. Strong, M. A. Kinch, and J. M. Armstrong, "Performance of 12-mm to 15-mm-pitch at MWIR and LWIR HgCdTe FPAs at elevated temperatures," J. Electronic Materials 42, 3103-3107 (2013).
184. A. Manissadjian, L. Rubaldo, Y. Rebeil, A. Kerlain, D. Brellier, and L. Mollard, "Improved IR detectors to swap heavy systems for SWaP," Proc. SPIE 8353, 835334 (2012) [doi: 10.1117/12.921879].
185. D. Z.-Y. Ting, C. J. Hill, A. Soibel, S. A. Keo, J. M. Mumolo, J. Nguyen, and S. D. Gunapala, "A high-performance long wavelength superlattice complementary barrier infrared detector," Applied Physics Letters 95, 023508 (2009).
186. S. B. Rafol, A. Soibel, A. Khoshakhlagh, J. Nguyen, J. K. Liu, J. Mumolo, S. A. Keo, L. Hoeglund, D. Z. Ting, and S. D. Gunapala, "Performance of a 1/4 VGA format long-wavelength infrared antimodesbased superlattice focal plane array," IEEE J. Quantum Electronics 48(7), 878-884 (2012).
187. A. Soibel, S. B. Rafol, A. Khoshakhlagh, J. Nguyen, L. Hoeglund, S. A. Keo, J. M. Mumolo, J. Liu, A. Liao, D. Z-Y. Ting, and S. D. Gunapala, "Long wavelength infrared superlattice detectors and FPAs based on CBIRD design," IEEE Photonics Technology Letters 25(9), 875-878 (2013).
188. N. Baier, L. Mollard, O. Gravrand, G. Bourgeois, J.-P. Zanatt, G. Destéfanis, O. Boulade, V. Moreau, F. Pinsard, L. Tauziède, A. Bardoux, L. Rubaldo, A. Kerlain, and J.-C. Peyrard, "MCT plananr p-on-n LW and VLW IRFPAs," Proc. SPIE 8704, 87042P (2013) [doi: 10.1117/12.2016369].
189. E. H. Steenbergen, B. C. Connelly, G. D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J. M. Fastenau, A. W. K. Liu, S. Elhamri, O. O. Cellek, and Y.-H. Zhang, "Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb," Applied Physics Letters 99, 251110 (2011).
190. P. C. Klipstein, Y. Livneh, A. Glozman, S. Grossman, O. Klim, N. Snapi, and E. Weiss, "Modeling InAs/GaSb and InAs/InAsSb superlattice infrared detectors," J. Electronic Materials 43(8), 2984-2990 (2014).
191. M. A. Kinch, "Fifty years of HgCdTe at Texas Instruments and beyond," Proc. SPIE 7298, 72982T (2009) [doi: 10.1117/12.819304].
192. A. J. Dekker, Solid State Physics, Macmillan & Co., London, p. 243 (1958).
193. H. Welker and H. Weiss, Solid State Physics III, Academic Press, New York, p. 1 (1956).