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Volumn 5406, Issue PART 1, 2004, Pages 133-144

A low noise, laser-gated imaging system for long range target identification

Author keywords

3D imaging; Active imaging; APD; Avalanche photodiode; HgCdTe; LADAR; LIDAR; SW

Indexed keywords

AVALANCHE DIODES; IMAGING TECHNIQUES; LASER APPLICATIONS; LASER PULSES; MERCURY COMPOUNDS; NEODYMIUM LASERS; OPTICAL PARAMETRIC OSCILLATORS; OPTICAL RADAR; PHOTODIODES; RADAR TARGET RECOGNITION; SPURIOUS SIGNAL NOISE; THREE DIMENSIONAL;

EID: 10044223434     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.541484     Document Type: Conference Paper
Times cited : (133)

References (7)
  • 1
    • 0022087134 scopus 로고
    • 0.7Te HgCdTe avalanche photodiode for optical transmission systems at λ=1.3μm
    • 0.7Te HgCdTe avalanche photodiode for optical transmission systems at λ=1.3μm", IEEE Trans. Elec. Dev, Vol. ED-32, pp. 1302-1306
    • (1985) IEEE Trans. Elec. Dev , vol.ED-32 , pp. 1302-1306
    • Alabedra, R.1    Orsal, B.2    Lecoy, G.3
  • 2
    • 0035358914 scopus 로고    scopus 로고
    • Summary of HgCdTe 2D array technology in the UK
    • Baker I.M. and Maxey C.D., (2003), "Summary of HgCdTe 2D array technology in the UK", Jn. Elec. Mat, Vol 30, No.6, p.682
    • (2003) Jn. Elec. Mat , vol.30 , Issue.6 , pp. 682
    • Baker, I.M.1    Maxey, C.D.2
  • 3
    • 0028738476 scopus 로고
    • CdHgTe-CMOS hybrid focal plane arrays - A flexible solution for advanced infrared systems
    • Baker I.M., Crimes G.J., Parsons J.E. and O'Keefe E.S., (1994), "CdHgTe-CMOS hybrid focal plane arrays - a flexible solution for advanced infrared systems", Proc. SPIE, Vol 2269, p.636
    • (1994) Proc. SPIE , vol.2269 , pp. 636
    • Baker, I.M.1    Crimes, G.J.2    Parsons, J.E.3    O'Keefe, E.S.4
  • 7
    • 0043269242 scopus 로고    scopus 로고
    • Metal-organic vapour-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates
    • Maxey C.D, Camplin J.P, Guilfoy I.T. et al, (2003), "Metal-organic vapour-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates", J. Electron. Mater., 32, No 7, p.656
    • (2003) J. Electron. Mater. , vol.32 , Issue.7 , pp. 656
    • Maxey, C.D.1    Camplin, J.P.2    Guilfoy, I.T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.