-
1
-
-
0005327373
-
-
edited by T. S. Moss, edited by S. Mahajan (North-Holland, Amsterdam)
-
J. R. Meyer, C. A. Hoffman, T. H. Myers, and N. C. Giles, in Handbook on Semiconductors, edited by T. S. Moss, Vol. 3 edited by S. Mahajan (North-Holland, Amsterdam, 1994), p. 535.
-
(1994)
Handbook on Semiconductors
, vol.3
, pp. 535
-
-
Meyer, J.R.1
Hoffman, C.A.2
Myers, T.H.3
Giles, N.C.4
-
2
-
-
0034667033
-
-
C. R. Becker, V. Latussek, A. Pfeuffer-Jeschke, G. Landwehr, and L. W. Molenkamp, Phys. Rev. B 62, 10 353 (2000).
-
(2000)
Phys. Rev. B
, vol.62
, pp. 10353
-
-
Becker, C.R.1
Latussek, V.2
Pfeuffer-Jeschke, A.3
Landwehr, G.4
Molenkamp, L.W.5
-
3
-
-
0000779556
-
-
E. I. Rashba, Fiz. Tverd. Tela 2, 1224 (1960) [Sov. Phys. Solid State 2, 1109 (1960)]; Yu. A. Bychkov and E. I. Rashba, Pis'ma Zh. Éksp. Teor. Fiz. 39, 66 (1984) [JETP Lett. 39, 78 (1984)].
-
(1960)
Fiz. Tverd. Tela
, vol.2
, pp. 1224
-
-
Rashba, E.I.1
-
4
-
-
0000696553
-
-
E. I. Rashba, Fiz. Tverd. Tela 2, 1224 (1960) [Sov. Phys. Solid State 2, 1109 (1960)]; Yu. A. Bychkov and E. I. Rashba, Pis'ma Zh. Éksp. Teor. Fiz. 39, 66 (1984) [JETP Lett. 39, 78 (1984)].
-
(1960)
Sov. Phys. Solid State
, vol.2
, pp. 1109
-
-
-
5
-
-
0002066039
-
-
E. I. Rashba, Fiz. Tverd. Tela 2, 1224 (1960) [Sov. Phys. Solid State 2, 1109 (1960)]; Yu. A. Bychkov and E. I. Rashba, Pis'ma Zh. Éksp. Teor. Fiz. 39, 66 (1984) [JETP Lett. 39, 78 (1984)].
-
(1984)
Pis'ma Zh. Éksp. Teor. Fiz.
, vol.39
, pp. 66
-
-
Bychkov, Yu.A.1
Rashba, E.I.2
-
6
-
-
0007235449
-
-
E. I. Rashba, Fiz. Tverd. Tela 2, 1224 (1960) [Sov. Phys. Solid State 2, 1109 (1960)]; Yu. A. Bychkov and E. I. Rashba, Pis'ma Zh. Éksp. Teor. Fiz. 39, 66 (1984) [JETP Lett. 39, 78 (1984)].
-
(1984)
JETP Lett.
, vol.39
, pp. 78
-
-
-
7
-
-
0030206803
-
-
M. Schultz, F. Heinrichs, U. Merkt, T. Colin, T. Skauli, and S. Løvold, Semicond. Sci. Technol. 11, 1168 (1996).
-
(1996)
Semicond. Sci. Technol.
, vol.11
, pp. 1168
-
-
Schultz, M.1
Heinrichs, F.2
Merkt, U.3
Colin, T.4
Skauli, T.5
Løvold, S.6
-
8
-
-
0034895006
-
-
X. C. Zhang, A. Pfeuffer-Jeschke, K. Ortner, V. Hock, H. Buhmann, C. R. Becker, and G. Landwehr, Phys. Rev. B 63, 245305 (2001).
-
(2001)
Phys. Rev. B
, vol.63
, pp. 245305
-
-
Zhang, X.C.1
Pfeuffer-Jeschke, A.2
Ortner, K.3
Hock, V.4
Buhmann, H.5
Becker, C.R.6
Landwehr, G.7
-
9
-
-
0000480622
-
-
C. A. Hoffman, J. R. Meyer, F. J. Bartoli, J. W. Han, J. W. Cook, J. F. Schetzina, and J. N. Schulman, Phys. Rev. B 39, 5208 (1989).
-
(1989)
Phys. Rev. B
, vol.39
, pp. 5208
-
-
Hoffman, C.A.1
Meyer, J.R.2
Bartoli, F.J.3
Han, J.W.4
Cook, J.W.5
Schetzina, J.F.6
Schulman, J.N.7
-
10
-
-
0027657378
-
-
and references therein
-
J. R. Meyer, C. A. Hoffman, and F. J. Bartoli, Physica B 191, 171 (1993), and references therein.
-
(1993)
Physica B
, vol.191
, pp. 171
-
-
Meyer, J.R.1
Hoffman, C.A.2
Bartoli, F.J.3
-
11
-
-
0037104234
-
-
K. Ortner, X. C. Zhang, A. Pfeuffer-Jeschke, C. R. Becker, G. Landwehr, and L. W. Molenkamp, Phys. Rev. B 66, 075322 (2002).
-
(2002)
Phys. Rev. B
, vol.66
, pp. 075322
-
-
Ortner, K.1
Zhang, X.C.2
Pfeuffer-Jeschke, A.3
Becker, C.R.4
Landwehr, G.5
Molenkamp, L.W.6
-
12
-
-
0029491371
-
-
edited by R. E. Longshore and J. W. Baars
-
C. R. Becker, V. Latussek, W. Spahn, F. Goschenhofer, S. Oehling and G. Landwehr, in Growth and Characterization of Materials for Infrared Detectors, edited by R. E. Longshore and J. W. Baars [Proc. SPIE 2554, 6 (1995)].
-
Growth and Characterization of Materials for Infrared Detectors
-
-
Becker, C.R.1
Latussek, V.2
Spahn, W.3
Goschenhofer, F.4
Oehling, S.5
Landwehr, G.6
-
13
-
-
0029491371
-
-
C. R. Becker, V. Latussek, W. Spahn, F. Goschenhofer, S. Oehling and G. Landwehr, in Growth and Characterization of Materials for Infrared Detectors, edited by R. E. Longshore and J. W. Baars [Proc. SPIE 2554, 6 (1995)].
-
(1995)
Proc. SPIE
, vol.2554
, pp. 6
-
-
-
14
-
-
36549103802
-
-
J. P. Laurenti, J. Camassel, A. Bouhemadou, B. Toulouse, R. Legros, and A. Lusson, J. Appl. Phys. 67, 6454 (1990).
-
(1990)
J. Appl. Phys.
, vol.67
, pp. 6454
-
-
Laurenti, J.P.1
Camassel, J.2
Bouhemadou, A.3
Toulouse, B.4
Legros, R.5
Lusson, A.6
-
15
-
-
0001104056
-
-
M. von Truchsess, V. Latussek, F. Goschenhofer, C. R. Becker, G. Landwehr, E. Batke, R. Sizmann, and P. Helgesen, Phys. Rev. B 51, 17 618 (1995).
-
(1995)
Phys. Rev. B
, vol.51
, pp. 17618
-
-
Von Truchsess, M.1
Latussek, V.2
Goschenhofer, F.3
Becker, C.R.4
Landwehr, G.5
Batke, E.6
Sizmann, R.7
Helgesen, P.8
-
17
-
-
0005291357
-
-
C. R. Becker, L. He, M. M. Regnet, M. M. Kraus, Y. S. Wu, G. Landwehr, X. F. Zhang, and H. Zhang, J. Appl. Phys. 74, 2486 (1993).
-
(1993)
J. Appl. Phys.
, vol.74
, pp. 2486
-
-
Becker, C.R.1
He, L.2
Regnet, M.M.3
Kraus, M.M.4
Wu, Y.S.5
Landwehr, G.6
Zhang, X.F.7
Zhang, H.8
-
18
-
-
0000298344
-
-
M. Li, C. R. Becker, R. Gall, W. Faschinger, and G. Landwehr, Appl. Phys. Lett. 71, 1822 (1997).
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 1822
-
-
Li, M.1
Becker, C.R.2
Gall, R.3
Faschinger, W.4
Landwehr, G.5
-
19
-
-
0000114945
-
-
M. Li, R. Gall, C. R. Becker, T. Gerhard, W. Faschinger, and G. Landwehr, J. Appl. Phys. 82, 4860 (1997).
-
(1997)
J. Appl. Phys.
, vol.82
, pp. 4860
-
-
Li, M.1
Gall, R.2
Becker, C.R.3
Gerhard, T.4
Faschinger, W.5
Landwehr, G.6
-
22
-
-
0000548014
-
-
N. F. Johnson, H. Ehrenreich, P. M. Hui, and P. M. Young, Phys. Rev. B 41, 3655 (1990).
-
(1990)
Phys. Rev. B
, vol.41
, pp. 3655
-
-
Johnson, N.F.1
Ehrenreich, H.2
Hui, P.M.3
Young, P.M.4
-
23
-
-
0000149886
-
-
A. Simon, D. Bertho, D. Boiron, and C. Jouanin, Phys. Rev. B 42, 5221 (1990).
-
(1990)
Phys. Rev. B
, vol.42
, pp. 5221
-
-
Simon, A.1
Bertho, D.2
Boiron, D.3
Jouanin, C.4
-
28
-
-
77957065871
-
-
edited by R. Willardson and A. C. Beer (Academic Press, New York)
-
M. H. Weiler, in Semiconductors and Semimetals, edited by R. Willardson and A. C. Beer (Academic Press, New York, 1981), Vol. 16, p. 119.
-
(1981)
Semiconductors and Semimetals
, vol.16
, pp. 119
-
-
Weiler, M.H.1
-
30
-
-
3843081660
-
-
Y. Kim, A. Ourmazd, M. Bode, and R. D. Feldman, Phys. Rev. Lett. 63, 636 (1989).
-
(1989)
Phys. Rev. Lett.
, vol.63
, pp. 636
-
-
Kim, Y.1
Ourmazd, A.2
Bode, M.3
Feldman, R.D.4
-
31
-
-
0027147794
-
-
E. Bangert, P. Boege, V. Latussek, and G. Landwehr, Semicond. Sci. Technol. 8, S99 (1993).
-
(1993)
Semicond. Sci. Technol.
, vol.8
-
-
Bangert, E.1
Boege, P.2
Latussek, V.3
Landwehr, G.4
-
32
-
-
0001549321
-
-
and references therein
-
Christian Tanguy, Phys. Rev. Lett. 75, 4090 (1995), and references therein.
-
(1995)
Phys. Rev. Lett.
, vol.75
, pp. 4090
-
-
Tanguy, C.1
-
33
-
-
6644226721
-
-
C. R. Becker, A. Pfeuffer-Jeschke, V. Latussek, M. Li, K. Ortner, V. Daumer, S. Oehling, W. Tang, and G. Landwehr, J. Cryst. Growth 184/185, 1185 (1998).
-
(1998)
J. Cryst. Growth
, vol.184-185
, pp. 1185
-
-
Becker, C.R.1
Pfeuffer-Jeschke, A.2
Latussek, V.3
Li, M.4
Ortner, K.5
Daumer, V.6
Oehling, S.7
Tang, W.8
Landwehr, G.9
-
34
-
-
33646202250
-
-
E. Burstein, Phys. Rev. 93, 632 (1954); T. S. Moss, Proc. Phys. Soc. London, Sect. B 76, 775 (1954).
-
(1954)
Phys. Rev.
, vol.93
, pp. 632
-
-
Burstein, E.1
-
36
-
-
0013188862
-
-
edited by G. Höhler and E. A. Niekisch (Springer-Verlag, Berlin)
-
R. Dornhaus and G. Nimtz, in Narrow-Gap Semiconductors, edited by G. Höhler and E. A. Niekisch (Springer-Verlag, Berlin, 1983), Vol. 98, p. 119.
-
(1983)
Narrow-Gap Semiconductors
, vol.98
, pp. 119
-
-
Dornhaus, R.1
Nimtz, G.2
|