"XBn" barrier photodetectors for high sensitivity and high operating temperature infrared sensors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6940, Issue , 2008, Pages

  Klipstein, Philip ^a  

^a SCD Semiconductor Devices Ltd   (Israel)

Author keywords

Dark current; Diffusion current; Focal plane array; Generation recombination current; High operating temperature; Indium arsenide antimonide; Infrared detector; Shockley read hall; Type II superlattice

Indexed keywords

COMPUTER NETWORKS; INFRARED RADIATION; OPTOELECTRONIC DEVICES; TECHNOLOGY;

CARRIER DEPLETION; HIGH OPERATING TEMPERATURE (HOT); HIGH SENSITIVITY (HS); INFRARED (IR) SENSORS; INFRARED TECHNOLOGIES; NARROW BAND-GAP (NBG); THRESHOLD TEMPERATURES;

PHOTODETECTORS;

EID: 45549091834     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.778848     Document Type: Conference Paper

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