Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

Applied Physics Letters

Volumn 99, Issue 25, 2011, Pages

  Steenbergen, E H ^a   Connelly, B C ^b   Metcalfe, G D ^b   Shen, H ^b   Wraback, M ^b   Lubyshev, D ^c   Qiu, Y ^c   Fastenau, J M ^c   Liu, A W K ^c   Elhamri, S ^d   Cellek, O O ^a   Zhang, Y H ^a  

^a Arizona State University   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c IQE INC   (United States)

^d UNIVERSITY OF DAYTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACKGROUND LIMITEDS; INAS; LIFETIME IMPROVEMENT; LONG-WAVELENGTH INFRARED; MINORITY CARRIER LIFETIMES; NON-RADIATIVE RECOMBINATIONS; OPERATING TEMPERATURE; SUPER-LATTICE STRUCTURES; TIME-RESOLVED PHOTOLUMINESCENCE; TYPE-II SUPERLATTICES;

GALLIUM; INFRARED DEVICES; INFRARED RADIATION; SUPERLATTICES;

CARRIER LIFETIME;

EID: 84555190893     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3671398     Document Type: Article

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