SCOPUS 정보 검색 플랫폼

Volumn 37, Issue 9, 2008, Pages 1200-1204

Characterization of PbSnSe/CdTe/Si (211) epilayers grown by molecular beam epitaxy

(11) Wang, X J a Fulk, C a,b Zhao, F H c Li, D H c Mukherjee, S c Chang, Y a Sporken, R a Klie, R a Shi, Z c Grein, C H a Sivananthan, S a

a UNIVERSITY OF ILLINOIS AT CHICAGO (United States)

b BAE International IncSDN BHD (Malaysia)

c University of Oklahoma (United States)

Author keywords

CdTe Si; Dislocations; Molecular beam epitaxy; PbSnSe

Indexed keywords

ALLOY FILMS; BAND GAPS; CDTE/SI; COMPOSITION DEPENDENCE; CRYSTALLINE QUALITY; DISLOCATIONS; EPILAYERS GROWN; ETCH PIT DENSITY; HIGH DIELECTRIC CONSTANT; INFRARED DETECTION; INTER-DIFFUSION; LONG WAVELENGTHS; MOLECULAR BEAM EPITAXY (MBE); NON-UNIFORM DISTRIBUTIONS; OPERATING TEMPERATURES; PBSNSE; QUANTUM WELLS; SUPER LATTICES; THREADING DEFECTS;

CADMIUM COMPOUNDS; CRYSTAL GROWTH; ENERGY GAP; EPITAXIAL FILMS; EPITAXIAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LATTICE MISMATCH; MERCURY COMPOUNDS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

MOLECULAR BEAM EPITAXY;

EID: 51849153368 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-008-0480-x Document Type: Article

Times cited : (7)

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