Modeling InAs/GaSb and InAs/InAsSb superlattice infrared detectors

Journal of Electronic Materials

Volumn 43, Issue 8, 2014, Pages 2984-2990

  Klipstein, P C ^a   Livneh, Y ^b   Glozman, A ^a   Grossman, S ^a   Klin, O ^a   Snapi, N ^a   Weiss, E ^a  

^a SCD Semiconductor Devices Ltd   (Israel)

^b TEL AVIV UNIVERSITY   (Israel)

Author keywords

gallium free superlattice; Infrared detector; k p method; pBp; type II superlattice; XBn

Indexed keywords

COMPUTER SIMULATION; DETECTORS; ENERGY GAP; INDIUM ANTIMONIDES; INFRARED DETECTORS;

DETECTOR MATERIALS; DIFFUSION LIMITED; PBP; PHOTOABSORPTIONS; SPECTRAL RESPONSE; THEORETICAL SIMULATION; TYPE-II SUPERLATTICES; XBN;

SUPERLATTICES;

EID: 84904264077     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-014-3169-3     Document Type: Article

References (22)

1. L. Bürkle and F. Fuchs, Handbook of Infrared Detection Technologies, eds. M. Henini and M. Razeghi, p. 159; ibid. M. Razeghi and H. Mohseni, (UK, USA and Japan: Elsevier, 2002), p. 191.
2. E.H. Steenbergen, B.C. Connelly, G.D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, S. Elhamri, O.O. Cellek, and Y.-H. Zhang, Appl. Phys. Lett. 99, 251110 (2011).
3. P.C. Klipstein, Phys. Rev. B 81, 235314 (2010).
4. E.E. Takhtamirov and V.A. Volkov, JETP 89, 1000 (1999).
5. Y. Livneh, P.C. Klipstein, O. Klin, N. Snapi, S. Grossman, A. Glozman, and E. Weiss, Phys. Rev. B 86, 235311 (2012).
6. P.C. Klipstein, Y. Livneh, O. Klin, S. Grossman, N. Snapi, A. Glozman, and E. Weiss, IR Phys. Technol. 59, 53 (2013).
7. P. Lawaetz, Phys. Rev. B4, 3460 (1971).
8. Y. Lin, D. Wang, D. Donetsky, L. Shterengas, G. Kipshidze, G. Belenky, S.P. Svensson, W.L. Sarney, and H.S. Hier, J. Electron. Mater. 42, 918 (2013).
9. Physics of Group IV Elements and III-V Compounds, Landolt-Börnstein New Series, Group III, Vol 17a, ed. K.H. Hellwege and O. Madelung, (Berlin: Springer, 1982), pp. 634-635.
10. I. Vurgaftman, J.R. Meyer, and L.R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).
11. R.A. Stradling Growth and Characterisation of Semiconductors ed. R.A. Stradling and P.C Klipstein, (Bristol: Adam Hilger, 1990), pp. 165-185.
12. P.C. Klipstein, US Patent 7,795,640 (2 July 2003).
13. P.C. Klipstein, US Patent 8,004,012 (6 April 2006).
14. P.C. Klipstein, Proc. SPIE 6940, 6940-2U (2008).
15. P.C. Klipstein, D. Aronov, M. Ben Ezra, I. Barkai, I. Barkai, E. Berkowicz, M. Brumer, R. Fraenkel, A. Glozman, A. Glozman, S. Grossman, E. Jacobsohn, O. Klin, I. Lukomsky, L. Shkedy, I. Shtrichman, N. Snapi, M. Yassen, and E. Weiss, IR Phys. Technol. 59, 172 (2013).
16. H.S. Kim, O.O. Cellek, Z.-Y. Lin, X.H. Zhao, S. Liu, H. Li, and Y.-H. Zhang, Appl. Phys. Lett. 101, 161114 (2012).
17. P.C. Klipstein, O. Klin, S. Grossman, N. Snapi, I. Lukomsky, M. Yassen, D. Aronov, E. Berkowicz, A. Glozman, O. Magen, I. Shtrichman, R. Fraenkel, and E. Weiss, Proc. SPIE 8268, 8268-0U (2012).
18. J. Lekner, Theory of Reflection (Berlin: Springer, 1987).
19. P.C. Klipstein, O. Klin, S. Grossman, N. Snapi, B. Yaakobovitz, M. Brumer, I. Lukomsky, D. Aronov, M. Yassen, B. Yofis, A. Glozman, T. Fishman, E. Berkowicz, O. Magen, I. Shtrichman, and E. Weiss, Proc. SPIE 7608, 7608-1V (2010).
20. F. Van de Wiele, Solid State Imaging (Pub. Noordhoff International) (1976), p. 44.
21. B.V. Olson, (University of Iowa. http://ir.uiowa.edu/etd/2596, 2013).
22. G. Belenky, G. Kipshidze, D. Donetsky, S.P. Svensson, W.L. Sarney, H. Hier, L. Shterengas, D. Wang, and Y. Lin, Proc. SPIE 8012, 8012-0W (2011).