Short-wave infrared HgCdTe avalanche photodiodes

Journal of Electronic Materials

Volumn 41, Issue 10, 2012, Pages 2928-2936

  Rothman, Johan ^a   Mollard, Laurent ^a   Bosson, Sylvie ^a   Vojetta, Gautier ^a   Foubert, Kevin ^a   Gatti, Sylvain ^b   Bonnouvrier, Gwladys ^b   Salveti, Frederic ^b   Kerlain, Alexandre ^b   Pacaud, Olivier ^b  

^a CEA LETI   (France)

^b SOFRADIR   (France)

Author keywords

APD; Excess noise factor; Gain; Gain model; HgCdTe; Local field impact ionization coefficient; Short wave

Indexed keywords

APD; EXCESS NOISE FACTOR; GAIN; GAIN MODELS; HGCDTE; LOCAL FIELDS; SHORT WAVES;

AVALANCHE PHOTODIODES; CADMIUM; ELECTRIC FIELDS; MERCURY COMPOUNDS; OPTICAL RADAR; PIXELS; SIGNAL TO NOISE RATIO;

INFRARED RADIATION;

EID: 84868590346     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-012-1970-4     Document Type: Conference Paper

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