Vacancies in Hg1-xCdxTe

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 729-731

  Chandra, D ^a   Schaake, H F ^a   Tregilgas, J H ^b   Aqariden, F ^a   Kinch, M A ^a   Syllaios, A J ^b  

^a DRS Sensors and Targeting Systems Inc   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; IONIZATION OF SOLIDS; MERCURY COMPOUNDS; PHASE EQUILIBRIA; POINT DEFECTS; SEMICONDUCTOR DOPING;

MERCURY CADMIUM TELLURIDE; VACANCIES;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033726316     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0215-0     Document Type: Article

References (9)

1. H.R. Vydyanath, J. Electrochem. Soc. 128, 2609 (1981).
2. C.L. Jones, M.J.T. Quelch, P. Capper, and J.J. Gosney, J. Appl. Phys. 53, 9060 (1982).
3. H.F. Schaake, J. Electron. Mater. 14, 513 (1985).
4. H.R. Vydyanath, J.C. Donovan, and D.A. Nelson, J. Electrochem. Soc. 128, 2625 (1981).
5. J.L. Schmit and E.L. Stelzer, J. Electron. Mater. 7, 65 (1978).
6. L.J. van der Pauw, Philips Res. Report 13, 1 (1958).
7. C.-H. Su, P.-K. Liao, and R.F. Brebrick, J. Electron. Mater. 12, 771 (1983).
8. D.E. Cooper and W.A. Harrison, J. Vac. Soc. Technol. A 8, 1112 (1990).
9. G.L. Hansen and J.L. Schmit, J. Appl. Phys. 54, 1639 (1983).