MOVPE growth of HgCdTe for high performance 3-5 μm photodiodes operating at 100-180 K

Journal of Electronic Materials

Volumn 28, Issue 6, 1999, Pages 589-595

  Mitra, P ^a   Case, F C ^a   Reine, M B ^b   Parodos, T ^b   Tobin, S P ^b   Norton, P W ^b  

^a LOCKHEED MARTIN   (United States)

^b LMIRIS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTIONS; HIGH TEMPERATURE APPLICATIONS; MERCURY COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM EFFICIENCY;

MEDIUM WAVELENGTH INFRARED (MWIR) PHOTODIODES;

PHOTODIODES;

EID: 0032650971     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0040-z     Document Type: Article

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