Characterization of HgCdTe MWIR back-illuminated electron-initiated avalanche photodiodes

Journal of Electronic Materials

Volumn 37, Issue 9, 2008, Pages 1376-1386

  Reine, M B ^a   Marciniec, J W ^a   Wong, K K ^a   Parodos, T ^a   Mullarkey, J D ^a   Lamarre, P A ^a   Tobin, S P ^a   Minich, R W ^a   Gustavsen, K A ^a   Compton, M ^b   Williams, G M ^b  

^a BAE SYSTEMS   (United States)

^b Voxtel Inc   (United States)

Author keywords

APD; Avalanche photodiode; HgCdTe; Infrared detector; Photodiode

Indexed keywords

APD; AVALANCHE PHOTODIODE; BACK-ILLUMINATED; CUT-OFF WAVELENGTHS; EMPIRICAL MODELING; EXPONENTIAL DEPENDENCE; HGCDTE; HGCDTE FILMS; INFRARED DETECTOR; MAXIMUM GAIN; PHOTODIODE; REVERSE BIAS VOLTAGES; ZERO FIELDS;

AVALANCHE PHOTODIODES; AVALANCHES (SNOWSLIDES); BIAS VOLTAGE; CADMIUM COMPOUNDS; CRYSTAL GROWTH; CURRENT DENSITY; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; OPTICAL DESIGN; PHOTODIODES; SNOW;

LIQUID PHASE EPITAXY;

EID: 51849136152     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0420-9     Document Type: Article

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