Universal 1/f noise model for reverse biased diodes

Applied Physics Letters

Volumn 94, Issue 19, 2009, Pages

  Kinch, M A ^a   Wan, C F ^a   Schaake, H ^a   Chandra, D ^a  

^a DRS Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; CHARGE LAYER; CHARGE TUNNELING; DIFFUSION CURRENTS; DIODE DARK CURRENT; HGCDTE; MID-WAVELENGTH INFRARED; PASSIVATION LAYER; PENNSYLVANIA; PER UNIT VOLUME; PHILADELPHIA; REVERSE-BIASED DIODE; SEMI-CONDUCTOR SURFACES;

CHARGED PARTICLES; MERCURY COMPOUNDS; PASSIVATION; SEMICONDUCTOR JUNCTIONS; SURFACE CHARGE; SURFACE DIFFUSION;

SEMICONDUCTOR DIODES;

EID: 67049132718     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3133982     Document Type: Article

References (7)

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