Detailed calculation of the Auger lifetime in p-type HgCdTe

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 828-831

  Krishnamurthy, S ^a   Casselman, T N ^b  

^a SRI INTERNATIONAL   (United States)

^b Consultant/SRI ^*  (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; MERCURY COMPOUNDS; SEMICONDUCTOR DOPING;

AUGER LIFETIME; FREE CARRIER LIFETIME; MERCURY CADMIUM TELLURIDE;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033689027     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0232-z     Document Type: Article

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