Gated IR imaging with 128 × 128 HgCdTe electron avalanche photodiode FPA

Journal of Electronic Materials

Volumn 37, Issue 9, 2008, Pages 1334-1343

  Beck, Jeff ^a   Woodall, Milton ^a   Scritchfield, Richard ^a   Ohlson, Martha ^a   Wood, Lewis ^a   Mitra, Pradip ^a   Robinson, Jim ^a  

^a DRS Sensors and Targeting Systems Inc   (United States)

Author keywords

APD; Avalanche photodiode; Dark current; Excess noise factor; Focal plane array; FPA; Gain; Gated imaging; HgCdTe; Infrared; Noise equivalent photons; Passive imaging; Readout integrated circuit

Indexed keywords

ACTIVE IMAGING; ACTIVE MODE; APD; APD DETECTORS; AVALANCHE PHOTODIODE; DARK CURRENT; DARK-CURRENT DENSITIES; EFFECTIVE GAIN; ELECTRON AVALANCHES; ELECTRON-INJECTION; EXCESS NOISE FACTOR; FOCAL PLANE ARRAY; FOCAL PLANES; FOCAL-PLANE ARRAYS; FPA; GAIN; GATED IMAGING; HGCDTE; HIGH QUANTUM EFFICIENCIES; INFRARED; INFRARED(IR); LOW-NOISE; MID-WAVE INFRARED; MODES OF OPERATIONS; NEAR-IR; NOISE EQUIVALENT PHOTONS; PASSIVE IMAGING; PASSIVE MODE; READOUT INTEGRATED CIRCUIT; SELF-ALIGNED; SENSOR SYSTEMS; TARGET DETECTIONS;

AVALANCHE PHOTODIODES; AVALANCHES (SNOWSLIDES); CMOS INTEGRATED CIRCUITS; ELECTRONICS INDUSTRY; FOCUSING; HETEROJUNCTION BIPOLAR TRANSISTORS; IMAGING SYSTEMS; IMAGING TECHNIQUES; INTEGRATED CIRCUITS; OPTICAL DESIGN; OPTOELECTRONIC DEVICES; PHOTODIODES; PHOTONS; SNOW;

MERCURY COMPOUNDS;

EID: 51849126567     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0433-4     Document Type: Article

References (6)

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