Epitaxial lead chalcogenides on Si for Mid-IR detectors and emitters including cavities

Journal of Electronic Materials

Volumn 37, Issue 9, 2008, Pages 1497-1503

  Zogg, H ^a   Arnold, M ^a   Felder, F ^a   Rahim, M ^a   Ebneter, C ^a   Zasavitskiy, I ^b   Quack, N ^c   Blunier, S ^c   Dual, J ^c  

^a ETH ZURICH   (Switzerland)

^b LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^c Institute of Mechanical Systems (IMES)   (Switzerland)

Author keywords

Epitaxy; Lead chalcogenides; Mid infrared optoelectronic devices; RCED; VECSEL

Indexed keywords

CHALCOGENIDE; EPITAXY; IR DETECTORS; LEAD CHALCOGENIDES; MID-INFRARED OPTOELECTRONIC DEVICES; NARROW-GAP SEMICONDUCTORS; RCED; VECSEL;

CHALCOGENIDES; INORGANIC COMPOUNDS; LEAD COMPOUNDS; PHASE CHANGE MEMORY; SEMICONDUCTING SILICON; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 51849164428     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0429-0     Document Type: Article

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