Diffusion of gold into plastically deformed undoped and boron-doped silicon

Defect and Diffusion Forum

Volumn 143-147, Issue , 1997, Pages 1021-1026

  Schachtrup, A Rodriguez ^a   Bracht, H ^a   Yonenaga, I ^b   Mehrer, H ^a  

^a UNIVERSITY OF MÜNSTER   (Germany)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Boron doped silicon; Diffusion; Dislocation; Fermi level effect; Gold; Kick out mechanism; Neutron activation analysis; Segregation

Indexed keywords

BORON; CHEMICAL ACTIVATION; DIFFUSION; DISLOCATIONS (CRYSTALS); GOLD; SEGREGATION (METALLOGRAPHY); SILICON;

BORON-DOPED SILICON; DIFFUSION MECHANISMS; DIFFUSION TEMPERATURE; DOPING DEPENDENCE; MECHANICAL SECTIONING; POSITIVELY CHARGED; TRANSPORT CAPACITY; VALENCE BAND EDGES;

NEUTRON ACTIVATION ANALYSIS;

EID: 12844289081     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/DDF.143-147.1021     Document Type: Article

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