Interstitial defect reactions in Silicon: The case of copper

Defect and Diffusion Forum

Volumn 131-132, Issue , 1996, Pages 89-164

  Mesli, A ^a,b   Heiser, T ^a  

^a CNRS   (France)

^b California Institute of Technology   (United States)

Author keywords

Defects; Diffusion; Electrical Characterization; Metallic Impurities; Metastabilities; Pairing

Indexed keywords

EID: 0004379142     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.131-132.89     Document Type: Article

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