Formation of copper precipitates in silicon

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 437-440

  Flink, Christoph ^a   Feick, Henning ^a   McHugo, Scott A ^a,b   Mohammed, Amna ^a,b   Seifert, Winfried ^a   Hieslmair, Henry ^a   Heiser, Thomas ^a,c   Istratov, Andrei A ^a   Weber, Eicke R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; CRYSTAL GROWTH FROM MELT; DEEP DRAWING; DIFFUSION IN SOLIDS; ELECTROSTATICS; FERMI LEVEL; PRECIPITATION (CHEMICAL); SEMICONDUCTOR GROWTH;

MINORITY CARRIER TRANSIENT SPECTROSCOPY (MCTS); TRANSIENT ION DRIFT (TID) TECHNIQUE;

SEMICONDUCTING SILICON;

EID: 0033357071     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00499-8     Document Type: Article

References (12)

1. R.H. Hall, J.H. Racette, J. Appl. Phys. 35 (1964) 379.
2. E.R. Weber, Appl. Phys. A 30 (1983) 1.
3. A.A. Istratov, C. Flink, H. Hieslmair, E.R. Weber, T. Heiser, Phys. Rev. Lett. 81 (1998) 1243.
4. K. Graff, Metal Impurities in Silicon-Device Fabrication, Springer, Berlin, 1995.
5. M. Seibt, M. Griess, A.A. Istratov, H. Hedemann, A. Sattler, W. Schroeter, Phys. Stat. Sol. A 166 (1998) 171.
6. M. Seibt, H. Hedemann, A.A. Istratov, F. Riedel, A. Sattler, W. Schroeter, Phys. Stat. Sol. A 171 (1999) 301.
7. A.A. Istratov, H. Hedemann, M. Seibt, O.F. Vyvenko, W. Schroeter, T. Heiser, C. Flink, H. Hieslmair, E.R. Weber, J. Electrochem. Soc. 145 (1998) 3889.
8. M.B. Shabani, T. Yoshimi, H. Abe, J. Electrochem. Soc. 143 (1996) 2025.
9. C. McCarthy, M. Miyazaki, H. Horie, S. Okamoto, H Tsuya, in: H.R. Huff, H. Tsuya, U. Goesele (Eds.), Semiconductor Silicon-1998, The Electrochem. Soc., Pennington, NJ, 1998, p. 629.
10. T. Heiser, E.R. Weber, Phys. Rev. B 58 (1998) 3893.
11. T. Heiser, S. McHugo, H. Hieslmair, E.R. Weber, Appl. Phys. Lett. 70 (1997) 3576.
12. C. Flink, to be published.