SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 106, Issue 6, 2015, Pages

Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates

(8) Sanne, A a Ghosh, R a Rai, A a Movva, H C P a Sharma, A a Rao, R a Mathew, L a Banerjee, S K a

a The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; ELECTRIC FIELD EFFECTS; GATE DIELECTRICS; HAFNIUM OXIDES; MOLYBDENUM COMPOUNDS; MONOLAYERS; SILICON; SILICON NITRIDE; SILICON OXIDES; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES; TRANSITION METALS;

CHARGED IMPURITY SCATTERINGS; CHEMICAL VAPOR DEPOSITED; ELECTRICAL CHARACTERISTIC; ELECTRICAL PERFORMANCE; FIELD EFFECT TRANSISTOR (FETS); MOLYBDENUM DISULFIDE; ROOM TEMPERATURE MOBILITY; TRANSITION METAL DICHALCOGENIDES (TMD);

FIELD EFFECT TRANSISTORS;

EID: 84923870381 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4907885 Document Type: Article

Times cited : (83)

References (28)

1
- 0001693779
- G. L. Frey, S. Elani, M. Homyonfer, Y. Feldman, and R. Tenne, Phys. Rev. B 57, 6666 (1998). 10.1103/PhysRevB.57.6666
- (1998) Phys. Rev. B , vol.57 , pp. 6666
- Frey, G.L.¹ Elani, S.² Homyonfer, M.³ Feldman, Y.⁴ Tenne, R.⁵

2
- 77957204738
- K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Phys. Rev. Lett. 105, 136805 (2010). 10.1103/PhysRevLett.105.136805
- (2010) Phys. Rev. Lett. , vol.105
- Mak, K.F.¹ Lee, C.² Hone, J.³ Shan, J.⁴ Heinz, T.F.⁵

3
- 84863325332
- T. Cao, G. Wang, W. P. Han, H. Q. Ye, C. R. Zhu, J. R. Shi, Q. Niu, P. H. Tan, E. Wang, B. L. Liu, and J. Feng, Nat. Commun. 3, 887 (2012). 10.1038/ncomms1882
- (2012) Nat. Commun. , vol.3 , pp. 887
- Cao, T.¹ Wang, G.² Han, W.P.³ Ye, H.Q.⁴ Zhu, C.R.⁵ Shi, J.R.⁶ Niu, Q.⁷ Tan, P.H.⁸ Wang, E.⁹ Liu, B.L.¹⁰ Feng, J.¹¹

4
- 84907881643
- D. Krasnozhon, D. Lembke, C. Nyffeler, Y. Leblebici, and A. Kis, Nano. Lett. 14, 5905 (2014). 10.1021/nl5028638
- (2014) Nano. Lett. , vol.14 , pp. 5905
- Krasnozhon, D.¹ Lembke, D.² Nyffeler, C.³ Leblebici, Y.⁴ Kis, A.⁵

5
- 84866104969
- S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, Nat. Commun. 3, 1011 (2012). 10.1038/ncomms2018
- (2012) Nat. Commun. , vol.3 , pp. 1011
- Kim, S.¹ Konar, A.² Hwang, W.S.³ Lee, J.H.⁴ Lee, J.⁵ Yang, J.⁶ Jung, C.⁷ Kim, H.⁸ Yoo, J.B.⁹ Choi, J.Y.¹⁰ Jin, Y.W.¹¹ Lee, S.Y.¹² Jena, D.¹³ Choi, W.¹⁴ Kim, K.¹⁵

6
- 84873606296
- W. Bao, X. Cai, D. Kim, K. Sridhara, and M. S. Fuhrer, Appl. Phys. Lett. 102, 042104 (2013). 10.1063/1.4789365
- (2013) Appl. Phys. Lett. , vol.102
- Bao, W.¹ Cai, X.² Kim, D.³ Sridhara, K.⁴ Fuhrer, M.S.⁵

7
- 79952406873
- B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotechnol. 6, 147 (2011). 10.1038/nnano.2010.279
- (2011) Nat. Nanotechnol. , vol.6 , pp. 147
- Radisavljevic, B.¹ Radenovic, A.² Brivio, J.³ Giacometti, V.⁴ Kis, A.⁵

8
- 84862776831
- H. Liu and P. D. D. Ye, IEEE Electron Device Lett. 33, 546 (2012). 10.1109/LED.2012.2184520
- (2012) IEEE Electron Device Lett. , vol.33 , pp. 546
- Liu, H.¹ Ye, P.D.D.²

9
- 84865085664
- M. W. Lin, L. Z. Liu, Q. Lan, X. B. Tan, K. S. Dhindsa, P. Zeng, V. M. Naik, M. M. C. Cheng, and Z. X. Zhou, J. Phys. D: Appl. Phys. 45, 345102 (2012). 10.1088/0022-3727/45/34/345102
- (2012) J. Phys. D: Appl. Phys. , vol.45
- Lin, M.W.¹ Liu, L.Z.² Lan, Q.³ Tan, X.B.⁴ Dhindsa, K.S.⁵ Zeng, P.⁶ Naik, V.M.⁷ Cheng, M.M.C.⁸ Zhou, Z.X.⁹

10
- 53549085391
- C. Jang, S. Adam, J. H. Chen, E. D. Williams, S. Das Sarma, and M. S. Fuhrer, Phys. Rev. Lett. 101, 146805 (2008). 10.1103/PhysRevLett.101.146805
- (2008) Phys. Rev. Lett. , vol.101
- Jang, C.¹ Adam, S.² Chen, J.H.³ Williams, E.D.⁴ Das Sarma, S.⁵ Fuhrer, M.S.⁶

11
- 84890723366
- D. Sercombe, S. Schwarz, O. Del Pozo-Zamudio, F. Liu, B. J. Robinson, E. A. Chekhovich, I. I. Tartakovskii, O. Kolosov, and A. I. Tartakovskii, Sci. Rep. 3, 3489 (2013). 10.1038/srep03489
- (2013) Sci. Rep. , vol.3 , pp. 3489
- Sercombe, D.¹ Schwarz, S.² Del Pozo-Zamudio, O.³ Liu, F.⁴ Robinson, B.J.⁵ Chekhovich, E.A.⁶ Tartakovskii, I.I.⁷ Kolosov, O.⁸ Tartakovskii, A.I.⁹

12
- 84901449360
- Z. Hu, D. Sinha, J. U. Lee, and M. Liehr, J. Appl. Phys. 115, 194507 (2014). 10.1063/1.4879236
- (2014) J. Appl. Phys. , vol.115
- Hu, Z.¹ Sinha, D.² Lee, J.U.³ Liehr, M.⁴

13
- 0003477452
- (Noyes, New York)
- H. Pierson, Handbook of Chemical Vapor Deposition (CVD): Principles, Technology, and Applications (Noyes, New York, 1992), p. 282.
- (1992) Handbook of Chemical Vapor Deposition (CVD): Principles, Technology, and Applications , pp. 282
- Pierson, H.¹

14
- 84860329324
- Y. Lee, X. Zhang, W. Zhang, M. Chang, C. Lin, K. Chang, Y. Yu, J. Wang, C. Chang, L. Li, and T. Lin, Adv. Mater. 24, 2320 (2012).
- (2012) Adv. Mater. , vol.24 , pp. 2320
- Lee, Y.¹ Zhang, X.² Zhang, W.³ Chang, M.⁴ Lin, C.⁵ Chang, K.⁶ Yu, Y.⁷ Wang, J.⁸ Chang, C.⁹ Li, L.¹⁰ Lin, T.¹¹

15
- 84878237613
- A. Zande, P. Huang, D. Chenet, T. Berkelbach, Y. You, G. Lee, T. Heinz, D. Reichman, D. Muller, and J. Hone, Nat. Mater. 12, 554 (2013). 10.1038/NMAT3633
- (2013) Nat. Mater. , vol.12 , pp. 554
- Zande, A.¹ Huang, P.² Chenet, D.³ Berkelbach, T.⁴ You, Y.⁵ Lee, G.⁶ Heinz, T.⁷ Reichman, D.⁸ Muller, D.⁹ Hone, J.¹⁰

16
- 84880831944
- S. Najmaei, Z. Liu, W. Zhou, Z. Zou, G. Shi, S. Lei, B. Yakobson, J. Idrobo, P. Ajayan, and J. Lou, Nat. Mater. 12, 754 (2013). 10.1038/nmat3673
- (2013) Nat. Mater. , vol.12 , pp. 754
- Najmaei, S.¹ Liu, Z.² Zhou, W.³ Zou, Z.⁴ Shi, G.⁵ Lei, S.⁶ Yakobson, B.⁷ Idrobo, J.⁸ Ajayan, P.⁹ Lou, J.¹⁰

17
- 77951069162
- A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, Nano Lett. 10, 1271 (2010). 10.1021/nl903868w
- (2010) Nano Lett. , vol.10 , pp. 1271
- Splendiani, A.¹ Sun, L.² Zhang, Y.³ Li, T.⁴ Kim, J.⁵ Chim, C.Y.⁶ Galli, G.⁷ Wang, F.⁸

18
- 84855440960
- H. Li, Z. Y. Yin, Q. Y. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, and H. Zhang, Small 8, 63 (2012). 10.1002/smll.201101016
- (2012) Small , vol.8 , pp. 63
- Li, H.¹ Yin, Z.Y.² He, Q.Y.³ Li, H.⁴ Huang, X.⁵ Lu, G.⁶ Fam, D.W.H.⁷ Tok, A.I.Y.⁸ Zhang, Q.⁹ Zhang, H.¹⁰

19
- 84877961084
- M. Amani, M. Chin, A. Birdwell, T. O'Regan, S. Najmaei, Z. Liu, P. Ajayan, J. Lou, and M. Dubey, Appl. Phys. Lett. 102, 193107 (2013). 10.1063/1.4804546
- (2013) Appl. Phys. Lett. , vol.102
- Amani, M.¹ Chin, M.² Birdwell, A.³ O'Regan, T.⁴ Najmaei, S.⁵ Liu, Z.⁶ Ajayan, P.⁷ Lou, J.⁸ Dubey, M.⁹

20
- 84879112432
- H. Liu, M. Si, S. Najmaei, A. Neal, Y. Du, P. Ajayan, J. Lou, and P. Ye, Nano. Lett. 13, 2640 (2013). 10.1021/nl400778q
- (2013) Nano. Lett. , vol.13 , pp. 2640
- Liu, H.¹ Si, M.² Najmaei, S.³ Neal, A.⁴ Du, Y.⁵ Ajayan, P.⁶ Lou, J.⁷ Ye, P.⁸

21
- 84887235715
- P. B. Shah, M. Amani, M. L. Chin, T. P. O'Regan, F. J. Crowne, and M. Dubey, Solid-State Electron. 91, 87 (2014). 10.1016/j.sse.2013.10.010
- (2014) Solid-State Electron. , vol.91 , pp. 87
- Shah, P.B.¹ Amani, M.² Chin, M.L.³ O'Regan, T.P.⁴ Crowne, F.J.⁵ Dubey, M.⁶

22
- 84873608464
- H. Wang, L. Yu, Y. Lee, W. Fang, A. Hsu, P. Herring, M. Chin, M. Dubey, L. Li, J. Kong, and T. Palacios, IEEE Int. Electron Device Meet. 2012, 4.6.1-4.6.4.
- IEEE Int. Electron Device Meet. , vol.2012 , pp. 461-464
- Wang, H.¹ Yu, L.² Lee, Y.³ Fang, W.⁴ Hsu, A.⁵ Herring, P.⁶ Chin, M.⁷ Dubey, M.⁸ Li, L.⁹ Kong, J.¹⁰ Palacios, T.¹¹

23
- 84981528630
- K. Chen, D. Kiriya, M. Hettick, M. Tosun, T.-J. Ha, S. R. Madhvapathy, S. Desai, A. Sachid, and A. Javey, APL Mater. 2, 092504 (2014). 10.1063/1.4891824
- (2014) APL Mater. , vol.2
- Chen, K.¹ Kiriya, D.² Hettick, M.³ Tosun, M.⁴ Ha, T.-J.⁵ Madhvapathy, S.R.⁶ Desai, S.⁷ Sachid, A.⁸ Javey, A.⁹

24
- 84920982498
- Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films," (1)
- T.-J. Ha, K. Chen, S. Chuang, K. M. Yu, D. Kiriya, and A. Javey, "Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films," Nano Letters 15 (1), 392-397 (2015). 10.1021/nl5037098
- (2015) Nano Letters , vol.15 , pp. 392-397
- Ha, T.-J.¹ Chen, K.² Chuang, S.³ Yu, K.M.⁴ Kiriya, D.⁵ Javey, A.⁶

25
- 84923893438
- e-print arXiv:1412.7852
- 2 on oxide," e-print arXiv:1412.7852
- 2 on Oxide
- Valsaraj, A.¹ Chang, J.² Register, L.F.³ Banerjee, S.K.⁴

26
- 84859085243
- K. Kaasbjerg, K. S. Thygesen, and K. W. Jacobsen, Phys. Rev. B 85, 115317 (2012). 10.1103/PhysRevB.85.115317
- (2012) Phys. Rev. B , vol.85
- Kaasbjerg, K.¹ Thygesen, K.S.² Jacobsen, K.W.³

27
- 84883179670
- B. Radisavljevic and A. Kis, Nat. Mater. 12, 815 (2013). 10.1038/nmat3687
- (2013) Nat. Mater. , vol.12 , pp. 815
- Radisavljevic, B.¹ Kis, A.²

28
- 77956444490
- W. Zhu, D. Neumayer, V. Perebeinos, and P. Avouris, Nano. Lett. 10, 3572 (2010). 10.1021/nl101832y
- (2010) Nano. Lett. , vol.10 , pp. 3572
- Zhu, W.¹ Neumayer, D.² Perebeinos, V.³ Avouris, P.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.